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PDF IRFP4410ZPBF Data sheet ( Hoja de datos )
| Número de pieza | IRFP4410ZPBF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
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PD - 97309A
IRFP4410ZPbF
HEXFET® Power MOSFET
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
VDSS
R D S (o n )
typ.
max.
ID (Silicon Limited)
100V
7.2m:
9.0m:
97A
DD
G
G
Gate
S
D
G
TO-247AC
S
D
Drain
S
Source
Absolute Maxim um Ratings
Symbol
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @T C = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
VG S
dv/dt
TJ
TSTG
Gate-to-Source Voltage
ePeak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
EAS (T hermally limited)
IAR
EAR
dSingle Pulse Avalanche Energy
ÃAvalanche Current
fRepetitive Avalanche Energy
Thermal Resistance
Symbol
RπJC
Parameter
jJu n ctio n- to- Ca se
RπCS
RπJA
Case-to-Sink, Flat Greased Surface
jJu n ctio n- to- A mb ie nt
www.irf.com
Max.
97
69
390
230
1.5
± 20
16
-55 to + 175
300
x x10lb in (1.1N m)
242
See Fig. 14, 15, 22a, 22b,
Typ.
–––
0.24
–––
Max.
0.65
–––
40
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
1
03/07/08
1 page  
IRFP4410ZPbF
1
D = 0.50
0.1
0.01
0.20
0.10
0.05
0.02
0.01
τJ τJ
τ1 τ1
R1R1
Ci= τi/Ri
Ci i/Ri
R2R2
τ2 τ2
τCτ
Ri (°C/W) τi (sec)
0.237 0.000178
0.413 0.003772
0.001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
0.01
0.1
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
100
Duty Cycle = Single Pulse
10 0.05
0.10
0.01
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆ Tj = 150°C and
Tstart =25°C (Single Pulse)
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Τ j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
tav (sec)
Fig 14. Typical Avalanche Current vs.Pulsewidth
1.0E-01
150 Notes on Repetitive Avalanche Curves , Figures 14, 15:
TOP
Single Pulse
(For further info, see AN-1005 at www.irf.com)
BOTTOM 1.0% Duty Cycle
1. Avalanche failures assumption:
ID = 58A
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
100
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
50 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 15. Maximum Avalanche Energy vs. Temperature
www.irf.com
5
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