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Número de pieza IKZ50N65EH5
Descripción IGBT
Fabricantes Infineon 
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No Preview Available ! IKZ50N65EH5 Hoja de datos, Descripción, Manual

IGBT
Highspeed5IGBTinTRENCHSTOPTM5technologycopackedwithRAPID1
fastandsoftantiparalleldiode
IKZ50N65EH5
650VDuoPackIGBTanddiode
Highspeedseriesfifthgeneration
Datasheet
IndustrialPowerControl

1 page




IKZ50N65EH5 pdf
IKZ50N65EH5
Highspeedseriesfifthgeneration
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES
Collector-emitter saturation voltage VCEsat
Diode forward voltage
VF
Gate-emitter threshold voltage
VGE(th)
Zero gate voltage collector current ICES
Gate-emitter leakage current
Transconductance
IGES
gfs
VGE=0V,IC=0.20mA
VGE=15.0V,IC=50.0A
Tvj=25°C
Tvj=100°C
Tvj=150°C
VGE=0V,IF=50.0A
Tvj=25°C
Tvj=100°C
Tvj=150°C
IC=0.50mA,VCE=VGE
VCE=650V,VGE=0V
Tvj=25°C
Tvj=175°C
VCE=0V,VGE=20V
VCE=20V,IC=50.0A
min.
Value
typ.
max. Unit
650 -
-V
-
-
1.65 2.10
1.82 -
V
- 1.90 -
-
-
1.35 1.70
1.33 -
V
- 1.30 -
3.2 4.0 4.8 V
- - 50.0 µA
- 2500.0 -
- - 100 nA
- 65.0 - S
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
DynamicCharacteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance1)
measured 5mm (0.197 in.) from
case
Symbol Conditions
Cies
Coes VCE=25V,VGE=0V,f=1MHz
Cres
QG
VCC=520V,IC=50.0A,
VGE=15V
LE
min.
Value
typ.
max. Unit
- 3100 -
- 90 - pF
- 11 -
- 109.0 - nC
- 13.0 - nH
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
IGBTCharacteristic,atTvj=25°C
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Tvj=25°C,
VCC=400V,IC=25.0A,
VGE=0.0/15.0V,
RG(on)=12.0,RG(off)=20.0,
Lσ=30nH,Cσ=25pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
Value
Unit
min. typ. max.
- 20 - ns
- 7 - ns
- 250 - ns
- 21 - ns
- 0.41 - mJ
- 0.19 - mJ
- 0.60 - mJ
1) The internal emitter inductance does not affect the gate control circuitry if bypassed by using the emitter sense pin.
5
Rev.2.1,2014-10-31

5 Page





IKZ50N65EH5 arduino
IKZ50N65EH5
Highspeedseriesfifthgeneration
1E+4
1000
100
10
D = 0.5
0.1 0.2
0.1
0.05
0.02
0.01
single pulse
0.01
Cies
Coes
Cres
1
0 5 10 15 20 25 30
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 17. Typicalcapacitanceasafunctionof
collector-emittervoltage
(VGE=0V,f=1MHz)
0.001
1E-7
i: 1 2 3 4 5 6
ri[K/W]: 9.5E-3 0.125039 0.132857 0.256654 0.021551 2.1E-3
τi[s]: 2.5E-5 2.3E-4 2.1E-3 0.012197 0.104256 1.840158
1E-6 1E-5 1E-4 0.001 0.01
tp,PULSEWIDTH[s]
0.1
Figure 18. IGBTtransientthermalimpedance
(D=tp/T)
100
Tvj = 25°C, IF = 25A
90 Tvj = 150°C, IF = 25A
D = 0.5
80
0.1
0.2 70
0.1
0.05 60
0.02
0.01
single pulse
50
40
0.01
30
20
0.001
1E-7
i: 1 2 3 4 5 6
ri[K/W]: 0.013431 0.146325 0.159015 0.278506 0.025538 2.1E-3
τi[s]: 2.6E-5 2.1E-4 2.0E-3 0.01147 0.091987 1.834403
1E-6 1E-5 1E-4 0.001 0.01
tp,PULSEWIDTH[s]
0.1
Figure 19. Diodetransientthermalimpedanceasa
functionofpulsewidth
(D=tp/T)
10
0
1000 1500 2000 2500 3000 3500 4000 4500
diF/dt,DIODECURRENTSLOPE[A/µs]
Figure 20. Typicalreverserecoverytimeasafunction
ofdiodecurrentslope
(VR=400V)
11 Rev.2.1,2014-10-31

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