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PDF IDP30E65D1 Data sheet ( Hoja de datos )
| Número de pieza | IDP30E65D1 | |
| Descripción | Diode ( Rectifier ) | |
| Fabricantes | Infineon | |
| Logotipo |  |
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Diode
RapidSwitchingEmitterControlledDiode
IDP30E65D1
EmitterControlledDiodeRapid1Series
Datasheet
IndustrialPowerControl
1 page  
IDP30E65D1
EmitterControlledDiodeRapid1Series
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
min.
Value
typ.
max. Unit
DiodeCharacteristic,atTvj=25°C
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Tvj=25°C,
VR=400V,
IF=30.0A,
diF/dt=1000A/µs,
Lσ=30nH,
Cσ=40pF,
switch IKW50N65H5
Tvj=25°C,
VR=400V,
IF=30.0A,
diF/dt=300A/µs,
Lσ=30nH,
Cσ=40pF,
switch IKW50N65H5
- 64 - ns
- 0.67 - µC
- 16.0 - A
- -1250 - A/µs
- 95 - ns
- 0.51 - µC
- 7.0 - A
- -600 - A/µs
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
Value
Unit
min. typ. max.
DiodeCharacteristic,atTvj=175°C/125°C
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Tvj=175°C,
VR=400V,
IF=30.0A,
diF/dt=1000A/µs,
Lσ=30nH,
Cσ=40pF,
switch IKW50N65H5
Diode reverse recovery time
Diode reverse recovery charge
trr
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Tvj=125°C,
VR=400V,
IF=30.0A,
diF/dt=300A/µs,
Lσ=30nH,
Cσ=40pF,
switch IKW50N65H5
- 103 - ns
- 1.41 - µC
- 23.0 - A
- -1150 - A/µs
- 129 - ns
- 0.92 - µC
- 10.3 - A
- -580 - A/µs
5 Rev.2.1,2014-09-18
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IDP30E65D1.PDF ] | |
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