PDF BFR843EL3 Data sheet ( Hoja de datos )

Número de pieza	BFR843EL3
Descripción	Robust Low Noise Broadband Pre-Matched Bipolar RF Transistor
Fabricantes	Infineon
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No Preview Available ! BFR843EL3 Robust Low Noise Broadband Pre-Matched Bipolar RF Transistor Data Sheet Revision 1.0, 2014-08-05 RF & Protection Devices 1 page BFR843EL3 List of Figures List of Figures Figure 4-1 Total Power Dissipation Ptot = f (Ts) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Figure 5-1 BFR843EL3 Testing Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Figure 6-1 Collector Current vs. Collector Emitter Voltage IC = f (VCE), IB = Parameter . . . . . . . . . . . . . . . . . 16 Figure 6-2 DC Current Gain hFE = f (IC), VCE = 1.8 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Figure 6-3 Collector Current vs. Base Emitter Forward Voltage IC = f (VBE), VCE = 1.8 V . . . . . . . . . . . . . . . . 17 Figure 6-4 Base Current vs. Base Emitter Forward Voltage IB = f (VBE), VCE = 1.8 V . . . . . . . . . . . . . . . . . . . 17 Figure 6-5 Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 1.8 V . . . . . . . . . . . . . . . . . . . 18 Figure 7-1 3rd Order Intercept Point at Output OIP3 = f (IC), ZS = ZL = 50 Ω, VCE, f = Parameters . . . . . . . . 19 Figure 7-2 3rd Order Intercept Point at Output OIP3 [dBm] =f (IC, VCE), ZS = ZL = 50 Ω, f = 5.5 GHz . . . . . . 19 Figure 7-3 Compression Point at Output OP1dB [dBm] = f (IC, VCE), ZS = ZL = 50 Ω, f = 5.5 GHz . . . . . . . . . . 20 Figure 7-4 Gain Gma, Gms, IS21I² = f (f), VCE = 1.8 V, IC = 15 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Figure 7-5 Maximum Power Gain Gmax = f (IC), VCE = 1.8 V, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . 21 Figure 7-6 Maximum Power Gain Gmax = f (VCE), IC = 15 mA, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . 21 Figure 7-7 Input Reflection Coefficient S11 = f (f), VCE = 1.8 V, IC = 8 / 15 mA . . . . . . . . . . . . . . . . . . . . . . . . 22 Figure 7-8 Source Impedance for Minimum Noise Figure Zopt = f (f), VCE = 1.8 V, IC = 8 / 15 mA . . . . . . . . . 22 Figure 7-9 Output Reflection Coefficient S22 = f (f), VCE = 1.8 V, IC = 8 / 15 mA . . . . . . . . . . . . . . . . . . . . . . . 23 Figure 7-10 Noise Figure NFmin = f (f), VCE = 1.8 V, IC = 8 / 15 mA, ZS = Zopt . . . . . . . . . . . . . . . . . . . . . . . . . . 23 Figure 7-11 Noise Figure NFmin = f (IC), VCE = 1.8 V, ZS = Zopt, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . 24 Figure 7-12 Noise Figure NF50 = f (IC), VCE = 1.8 V, ZS = 50 Ω, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . 24 Figure 9-1 Package Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 Figure 9-2 Package Footprint. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 Figure 9-3 Marking Description (Marking BFR843EL3: T2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 Figure 9-4 Tape dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 Data Sheet 5 Revision 1.0, 2014-08-05 5 Page 5 Electrical Characteristics BFR843EL3 Electrical Characteristics 5.1 DC Characteristics Table 5-1 DC Characteristics at TA = 25 °C Parameter Symbol Collector emitter breakdown voltage V(BR)CEO Min. 2.25 Collector emitter leakage current ICES – Collector base leakage current ICBO – Emitter base leakage current IEBO – DC current gain hFE 230 – 5.2 General AC Characteristics Values Typ. Max. 2.6 – 400 – 400 – 10 360 580 260 – Unit Note / Test Condition V IC = 1 mA, IB = 0 Open base nA VCE = 1.5 V, VBE = 0 E-B short circuited nA VCB = 1.5 V, IE = 0 Open emitter μA VEB = 0.5 V, IC = 0 Open collector VCE = 1.8 V, IC = 1 mA VCE = 1.8 V, IC = 15 mA Pulse measured Table 5-2 General AC Characteristics at TA = 25 °C Parameter Symbol Min. Collector base capacitance1) CCB – Collector emitter capacitance CCE – Emitter base capacitance CEB – 1) Including integrated feedback capacitance Values Typ. Max. 5.26 – 0.07 0.42 – 0.66 – Unit Note / Test Condition pF f = 1 MHz f = 1 GHz VCB = 1.8 V, VBE = 0 Emitter grounded pF f = 1 MHz VCE = 1.8 V, VBE= 0 Base grounded pF f = 1 MHz VEB = 0.4 V,VCB = 0 Collector grounded Data Sheet 11 Revision 1.0, 2014-08-05 11 Page

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