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PDF 4N80-N Data sheet ( Hoja de datos )

Número de pieza 4N80-N
Descripción N-CHANNEL POWER MOSFET
Fabricantes Unisonic Technologies 
Logotipo Unisonic Technologies Logotipo



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No Preview Available ! 4N80-N Hoja de datos, Descripción, Manual

UNISONIC TECHNOLOGIES CO., LTD
4N80-N
4.0A, 800V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 4N80-N is a N-channel mode power MOSFET using
UTC’s advanced technology to provide costomers planar stripe and
DMOS technology. This technology is specialized in allowing a
minimum on-state resistance, and superior switching performance. It
also can withstand high energy pulse in the avalanche and
commutation mode.
The UTC 4N80-N is universally applied in high efficiency switch
mode power supply.
FEATURES
* RDS(on)<3.0@VGS =10V
* High switching speed
* Improved dv/dt capability
* 100% avalanche tested
SYMBOL
2.Drain
Power MOSFET
1.Gate
3.Source
ORDERING INFORMATION
Note:
Ordering Number
Lead Free
Halogen Free
4N80L-TM3-T
4N80G-TM3-T
4N80L-TN3-R
4N80G-TN3-R
Pin Assignment: G: Gate D: Drain S: Source
Package
TO-251
TO-252
Pin Assignment
123
GDS
GDS
Packing
Tube
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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4N80-N pdf
4N80-N
TEST CIRCUITS AND WAVEFORMS(Cont.)
VDS 90%
Power MOSFET
Switching Test Circuit
10%
VGS
tD(ON)
tR
tD(OFF)
tF
VGS
10V
Switching Waveforms
QG
QGS
QGD
Gate Charge Test Circuit
Charge
Gate Charge Waveform
Unclamped Inductive Switching Test Circuit
BVDSS
IAS
VDD
ID(t)
VDS(t)
tp Time
Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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