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PDF IRHMS597Z60 Data sheet ( Hoja de datos )
| Número de pieza | IRHMS597Z60 | |
| Descripción | RADIATION HARDENED POWER MOSFET | |
| Fabricantes | International Rectifier | |
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PD-94666C
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (Low-Ohmic TO-254AA)
IRHMS597Z60
30V, P-CHANNEL
5 TECHNOLOGY
Product Summary
Part Number Radiation Level
IRHMS597Z60 100K Rads (Si)
IRHMS593Z60 300K Rads (Si)
RDS(on)
0.014Ω
0.014Ω
ID
-45A*
-45A*
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
Low-Ohmic
TO-254AA
Features:
n Low RDS(on)
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Eyelets
n Electrically Isolated
n Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = -12V, TC = 25°C Continuous Drain Current
ID @ VGS = -12V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Pre-Irradiation
Units
-45*
-45* A
-180
208 W
1.67
W/°C
±20 V
1250
mJ
-45 A
20.8
mJ
-0.6
-55 to 150
V/ns
oC
300 (0.063in./1.6mm from case for 10s)
9.3 (Typical)
g
* Current is limited by package
For footnotes refer to the last page
www.irf.com
1
10/02/08
1 page  
Pre-Irradiation
IRHMS597Z60
14000
12000
10000
8000
6000
VGS = 0V, f = 1 MHz
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
4000
2000
0
1
Crss
10
-VDS, Drain-to-Source Voltage (V)
100
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20
ID = -45A
16
VDS= -24V
VDS= -15V
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0 20 40 60 80 100 120 140 160 180
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100 TJ = 150°C
TJ = 25°C
10
VGS = 0V
1
01234
-VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
1000
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µs
Tc = 25°C
Tj = 150°C
Single Pulse
10
1
10
1ms
10ms
100
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
5
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| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRHMS597Z60.PDF ] | |
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