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PDF IRHMS57264SE Data sheet ( Hoja de datos )

Número de pieza IRHMS57264SE
Descripción RADIATION HARDENED POWER MOSFET
Fabricantes International Rectifier 
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PD-95871
IRHMS57264SE
RADIATION HARDENED
JANSR2N7477T1
POWER MOSFET
250V, N-CHANNEL
THRU-HOLE (Low-Ohmic TO-254AA)
Product Summary
REF: MIL-PRF-19500/685
5 TECHNOLOGY
™
Part Number
Radiation Level RDS(on) ID QPL Part Number
IRHMS57264SE 100K Rads (Si) 0.06137A JANSR2N7477T1
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
Low-Ohmic
TO-254AA
Features:
n Low RDS(on)
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Eyelets
n Electrically Isolated
n Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
Units
37
23.5 A
148
208 W
1.67
W/°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
±20
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
258
37
20.8
14
-55 to 150
Storage Temperature Range
Lead Temperature
Weight
300 (0.063 in.(1.6 mm from case for 10s))
9.3 ( Typical)
V
mJ
A
mJ
V/ns
oC
g
For footnotes refer to the last page
www.irf.com
1
11/01/04

1 page




IRHMS57264SE pdf
Pre-Irradiation
IRHMS57264SE, JANSR2N777T1
10000
8000
6000
4000
2000
VGS = 0V, f = 1 MHz
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
0
1
10
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
20
ID = 37A
16
12
VDS = 200V
VDS = 125V
VDS = 50V
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0 40 80 120 160 200
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
10 TJ = 150°C
TJ = 25°C
1
0.1
0.2
VGS = 0V
0.4 0.6 0.8 1.0
VSD , Source-to-Drain Voltage (V)
1.2
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
1000
100
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100µs
10
1ms
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1 10
10ms
100 1000
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
5

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