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PDF IRHMS57163SE Data sheet ( Hoja de datos )
| Número de pieza | IRHMS57163SE | |
| Descripción | RADIATION HARDENED POWER MOSFET | |
| Fabricantes | International Rectifier | |
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PD-95840A
IRHMS57163SE
RADIATION HARDENED
JANSR2N7475T1
POWER MOSFET
130V, N-CHANNEL
THRU-HOLE (Low-Ohmic TO-254AA)
REF: MIL-PRF-19500/685
5 TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on) ID QPL Part Number
IRHMS57163SE 100K Rads (Si) 0.0155Ω 45A* JANSR2N7475T1
Low-Ohmic
TO-254AA
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
Features:
n Low RDS(on)
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Eyelets
n Electrically Isolated
n Light Weight
n ESD Rating: Class 3B per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
Pre-Irradiation
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
Units
45*
45* A
180
208 W
1.67
W/°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
±20
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
432
45
20.8
11.3
-55 to 150
Storage Temperature Range
Lead Temperature
Weight
300 (0.063 in.(1.6 mm from case for 10s))
9.3 ( Typical)
V
mJ
A
mJ
V/ns
°C
g
* Current is limited by package
For footnotes refer to the last page
www.irf.com
1
01/26/15
1 page  
Pre-Irradiation
IRHMS57163SE, JANSR2N7475T1
12000
10000
8000
6000
4000
VGS = 0V, f = 1 MHz
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
2000
Crss
0
1
10
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
20
ID = 45A
16
VDS = 104V
VDS = 65V
VDS = 26V
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0 20 40 60 80 100 120 140 160 180
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
TJ = 150°C
10
1
TJ = 25°C
0.1
0.2
VGS = 0V
0.4 0.6 0.8 1.0 1.2
VSD , Source-to-Drain Voltage (V)
1.4
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100
100µs
10
1ms
10ms
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1 10
DC
100
VDS , Drain-to-Source Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
5
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| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRHMS57163SE.PDF ] | |
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