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PDF IRHM57264SE Data sheet ( Hoja de datos )
| Número de pieza | IRHM57264SE | |
| Descripción | RADIATION HARDENED POWER MOSFET | |
| Fabricantes | International Rectifier | |
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Hay una vista previa y un enlace de descarga de IRHM57264SE (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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PD-93798B
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-254AA)
IRHM57264SE
250V, N-CHANNEL
5 TECHNOLOGY
Product Summary
Part Number Radiation Level
IRHM57264SE 100K Rads (Si)
RDS(on) ID
0.066Ω 35A*
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
TO-254
Features:
n Low RDS(on)
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Eyelets
n Electrically Isolated
n Light Weight
Absolute Maximum Ratings
Pre-Irradiation
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current
35*
Continuous Drain Current
26
Pulsed Drain Current À
140
Max. Power Dissipation
250
Linear Derating Factor
2.0
Gate-to-Source Voltage
±20
Single Pulse Avalanche Energy Á
500
Avalanche Current À
35
Repetitive Avalanche Energy À
25
Peak Diode Recovery dv/dt Â
5.0
Operating Junction
-55 to 150
Storage Temperature Range
Lead Temperature
300 (0.063 in.(1.6 mm from case for 10s))
Weight
9.3 ( Typical)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
oC
g
* Current is limited by package
For footnotes refer to the last page
www.irf.com
1
10/23/06
1 page  
Pre-Irradiation
IRHM57264SE
10000
8000
VCCCGirossssSss
=
=
=
=
0V,
CCCggdsds
+
+
f = 1MHz
Cgd , Cds
Cgd
SHORTED
6000
Ciss
4000
2000
0
1
Coss
Crss
10
VDS , Drain-to-Source Voltage (V)
100
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 ID = 35A
16
VDS = 200V
VDS = 125V
VDS = 50V
12
8
4
FOR TEST CIRCUIT
0 SEE FIGURE 13
0 40 80 120 160 200
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
1000
100
OPERATION IN THIS AREA LIMITED
BY R DS(ON)
TJ = 150°C
10
1
TJ = 25 °C
0.1
0.0
VGS = 0 V
0.5 1.0 1.5
VSD ,Source-to-Drain Voltage (V)
2.0
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
10 10µs
100µs
1 1ms
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1 10
10ms
100 1000
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRHM57264SE.PDF ] | |
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