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Número de pieza | BLF9G38LS-90P | |
Descripción | Power LDMOS transistor | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
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No Preview Available ! BLF9G38LS-90P
Power LDMOS transistor
Rev. 2 — 3 July 2015
Product data sheet
1. Product profile
1.1 General description
90 W LDMOS power transistor for base station applications at frequencies from
3400 MHz to 3600 MHz.
Table 1. Typical performance
Typical RF performance at Tcase = 25 C in the Doherty application demo circuit.
Test signal
f
VDS
PL(AV)
Gp
D
(MHz)
(V) (W)
(dB) (%)
IS-95
3400 to 3600 28 15.1
12.7 37.0
ACPR
(dBc)
37 [1]
[1] Test signal: IS-95; pilot, paging, sync, 6 traffic channels with Walsh codes 8 13; PAR = 9.7 dB at 0.01 %
probability.
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low thermal resistance providing excellent thermal stability
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifier for LTE base stations and multi carrier applications in the
3400 MHz to 3600 MHz frequency range
1 page NXP Semiconductors
7.4 Test circuit
PP
BLF9G38LS-90P
Power LDMOS transistor
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Fig 2.
Printed-Circuit Board (PCB): Rogers RO4350B; r = 3.5; thickness = 0.508 mm;
thickness copper plating = 35 m.
See Table 10 for a list of components.
Component layout for Doherty development test circuit
Table 10. List of components
See Figure 3 for component layout.
Component
Description
C1, C3, C4, C6, C7, multilayer ceramic chip capacitor
C8, C10
C2, C5
multilayer ceramic chip capacitor
C9 multilayer ceramic chip capacitor
C11, C12, C13, C14 multilayer ceramic chip capacitor
C15, C16
multilayer ceramic chip capacitor
C17, C18
electrolytic capacitor
P1, P2, P3, P4, P5, copper foil strip
P6, P7
R1 SMD resistor
R2, R3
SMD resistor
Value
9.1 pF
0.9 pF
1.3 pF
1 F, 50 V
10 F, 50 V
2200 F, 63 V
-
50
5.1
Remarks
ATC 600F
ATC 600F
ATC 600F
Murata
Murata
needed for tuning
SMD 2512
SMD 0805
BLF9G38LS-90P
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 3 July 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
5 of 15
5 Page NXP Semiconductors
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BLF9G38LS-90P
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 3 July 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
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BLF9G38LS-90P | Power LDMOS transistor | NXP Semiconductors |
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