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PDF BLF888D Data sheet ( Hoja de datos )
| Número de pieza | BLF888D | |
| Descripción | UHF power LDMOS transistor | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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BLF888D; BLF888DS
UHF power LDMOS transistor
Rev. 2 — 27 June 2014
Product data sheet
1. Product profile
1.1 General description
A 600 W LDMOS RF power transistor for broadcast Doherty transmitter applications. The
excellent ruggedness of this device makes it ideal for digital and analog transmitter
applications.
Table 1. Application information
RF performance at VDS = 50 V in an ultra wide Doherty application.
Test signal
f
PL(AV)
Gp D
(MHz)
(W)
(dB) (%)
DVB-T (8k OFDM)
470 to 860 115 to 134 [1] 17 40 to 48 [1]
IMDshldr
(dBc)
38 to 44 [2]
PAR
(dB)
8 [3]
[1] Depending on selected channel.
[2] Depending on exciter used.
[3] PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on
CCDF.
1.2 Features and benefits
High efficiency
High power gain
Excellent ruggedness (VSWR 40 : 1 through all phases)
Excellent thermal stability
Integrated ESD protection
One Doherty design covers the full bandwidth from 470 MHz to 860 MHz
Internal input matching for ease of use
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Broadcast transmitter applications in the UHF band
Digital broadcasting
1 page  
NXP Semiconductors
BLF888D; BLF888DS
UHF power LDMOS transistor
Table 9. List of components …continued
For test circuit see Figure 1.
Component
Description
Value
Remarks
C22, C23
multilayer ceramic chip capacitor 47 pF
[2]
C30 multilayer ceramic chip capacitor 15 pF
[3]
C31 multilayer ceramic chip capacitor 5.6 pF
[3]
C32 multilayer ceramic chip capacitor 2.7 pF
[3]
C33, C34, C35
multilayer ceramic chip capacitor 100 pF
[3]
C36, C37
multilayer ceramic chip capacitor 470 F, 50 V
R1, R2
resistor
10
R3, R4
resistor
5.6
SMD 1206
R5, R6
resistor
100
R3, R4
resistor
510
SMD 1206
T1, T2
semi rigid coax
25 , length = 160 mm
Micro-Coax
UT-090C-25
[1] American Technical Ceramics type 180R or capacitor of same quality.
[2] American Technical Ceramics type 100B or capacitor of same quality.
[3] American Technical Ceramics type 100A or capacitor of same quality.
7.3 Graphical data
7.3.1 1-Tone CW pulsed
*S
G%
DDD
3/ :
IDq = 2 650 mA; tp = 100 s; = 10 %.
(1) VDS = 40 V
(2) VDS = 45 V
(3) VDS = 50 V
(4) VDS = 55 V
Fig 2. Power gain as a function of output power;
typical values
Ș'
DDD
3/ :
IDq = 2 650 mA; tp = 100 s; = 10 %.
(1) VDS = 40 V
(2) VDS = 45 V
(3) VDS = 50 V
(4) VDS = 55 V
Fig 3. Drain efficiency as a function of output power;
typical values
BLF888D_BLF888DS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 27 June 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
5 of 12
5 Page 
NXP Semiconductors
BLF888D; BLF888DS
UHF power LDMOS transistor
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
12.4 Licenses
ICs with DVB-T or DVB-T2 functionality
Use of this product in any manner that complies with the DVB-T or the
DVB-T2 standard may require licenses under applicable patents of the
DVB-T respectively the DVB-T2 patent portfolio, which license is available
from Sisvel S.p.A., Via Sestriere 100, 10060 None (TO), Italy, and under
applicable patents of other parties.
12.5 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
BLF888D_BLF888DS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 27 June 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
11 of 12
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