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PDF BLF888BS Data sheet ( Hoja de datos )

Número de pieza BLF888BS
Descripción UHF power LDMOS transistor
Fabricantes NXP Semiconductors 
Logotipo NXP Semiconductors Logotipo



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No Preview Available ! BLF888BS Hoja de datos, Descripción, Manual

BLF888B; BLF888BS
UHF power LDMOS transistor
Rev. 2 — 12 July 2013
Product data sheet
1. Product profile
1.1 General description
A 650 W LDMOS RF power transistor for broadcast transmitter applications and industrial
applications. The excellent ruggedness of this device makes it ideal for digital and analog
transmitter applications.
Table 1. Application information
RF performance at VDS = 50 V unless otherwise specified.
Mode of operation f
PL(AV) PL(M)
Gp
D IMD3 IMDshldr
(MHz)
(W) (W) (dB) (%) (dBc) (dBc)
RF performance in a common source 860 MHz narrowband test circuit
2-tone, class-AB
DVB-T (8k OFDM)
f1 = 860; f2 = 860.1 250
858 120
-
-
21 46 34 -
21 33 -
31[1]
RF performance in a common source 470 MHz to 860 MHz broadband test circuit
DVB-T (8k OFDM) 858
120 -
20 32 -
32 [1]
PAR
(dB)
-
8.2 [2]
8.0 [2]
[1] Measured [dBc] with delta marker at 4.3 MHz from center frequency.
[2] PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on
CCDF.
1.2 Features and benefits
Excellent ruggedness
Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W
High power gain
High efficiency
Designed for broadband operation (470 MHz to 860 MHz)
Internal input matching for high gain and optimum broadband operation
Excellent reliability
Easy power control
Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC
1.3 Applications
Communication transmitter applications in the UHF band
Industrial applications in the UHF band

1 page




BLF888BS pdf
NXP Semiconductors
BLF888B; BLF888BS
UHF power LDMOS transistor
7. Application information
7.1 Narrowband RF figures
7.1.1 2-Tone
24
Gp
(dB)
22
20
18
16
Gp
ηD
001aao018 60
ηD
(%)
50
40
30
20
24
Gp
(dB)
22
20
18
16
Gp
IMD3
001aao019 0
IMD3
(dBc)
-10
-20
-30
-40
14 10 14 -50
12
0
0
100 200 300 400 500
PL(AV) (W)
Fig 2.
VDS = 50 V; IDq = 1.3 A; measured in a common source
narrowband 860 MHz test circuit.
2-Tone power gain and drain efficiency as
function of load power; typical values
12
0
-60
100 200 300 400 500
PL(AV) (W)
Fig 3.
VDS = 50 V; IDq = 1.3 A; measured in a common source
narrowband 860 MHz test circuit.
2-Tone power gain and third order
intermodulation distortion as load power;
typical values
BLF888B_BLF888BS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 12 July 2013
© NXP B.V. 2013. All rights reserved.
5 of 17

5 Page





BLF888BS arduino
NXP Semiconductors
BLF888B; BLF888BS
UHF power LDMOS transistor
L32
L30
50 mm
L33
L31
L31
L5
L1
L1
L2
L2
L30
L5
L32
105 mm
See Table 9 for a list of components.
Fig 11. Printed-Circuit Board (PCB) for class-AB common source amplifier
L3
L4
L3
001aao026
+VG1(test)
R5
C36
R7
50 Ω
R3
C34
C33
C35
C32
C30
C31
4 mm
R4
C37 R6
R8
+VG2(test)
R1
C17
C19
C1 C3
C5
C2 C4 C6
49.6 mm
44 mm
+VD1(test)
+
-
C21
C11
C23
C7 C9
C10
C13
C8
C12
C14
C15
50 Ω
C16
C20
R2
C18
6.3 mm
C22
-
C24
+
+VD2(test)
24.3 mm
27 mm
36.8 mm
001aao027
See Table 9 for a list of components.
Fig 12. Component layout for class-AB common source amplifier
BLF888B_BLF888BS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 12 July 2013
© NXP B.V. 2013. All rights reserved.
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