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PDF BLF10M6LS200 Data sheet ( Hoja de datos )
| Número de pieza | BLF10M6LS200 | |
| Descripción | Power LDMOS transistor | |
| Fabricantes | NXP Semiconductors | |
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BLF10M6200; BLF10M6LS200
Power LDMOS transistor
Rev. 1 — 1 July 2013
Product data sheet
1. Product profile
1.1 General description
200 W LDMOS power transistor for ISM applications at frequencies from 700 MHz to
1000 MHz.
Table 1. Typical performance
Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
Test signal
f
VDS
PL(AV)
Gp
D
ACPR
(MHz)
(V) (W)
(dB) (%) (dBc)
2-carrier W-CDMA
869 to 894
28 40
20 28.5 39[1]
[1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier;
carrier spacing 5 MHz.
1.2 Features and benefits
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (700 MHz to 1000 MHz)
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
(RoHS)
1.3 Applications
RF power amplifiers for ISM applications in the 700 MHz to 1000 MHz frequency
range.
1 page  
NXP Semiconductors
BLF10M6200; BLF10M6LS200
Power LDMOS transistor
Table 9. List of components
See Figure 1 and Figure 2.
Component
Description
C1, C3, C11, C12, C16 multilayer ceramic chip capacitor
C2 multilayer ceramic chip capacitor
C5, C6
multilayer ceramic chip capacitor
C7, C8, C9, C10
electrolytic capacitor
C13, C14
multilayer ceramic chip capacitor
C15 multilayer ceramic chip capacitor
C17, C18
electrolytic capacitor
L1 ferrite SMD bead
Q1 BLF10M6200
R1, R2, R3
SMD resistor
Value
Remarks
68 pF
[1] solder vertically
13 pF
[1] solder vertically
10 pF
[1] solder vertically
220 nF
Vishay VJ1206Y224KXB
4.7 F, 50 V [2]
1.5 pF
[1] solder vertically
220 F, 63 V
- Ferroxcube BDS 3/3/4.6-4S2 or equivalent
-
9.1 , 0.1 W
[1] American Technical Ceramics type 100B or capacitor of same quality.
[2] TDK or capacitor of same quality.
7.3 Graphical data
7.3.1 One-tone CW
21
Gp
(dB)
19
Gp
ηD
001aaj415
60
ηD
(%)
40
17 20
15
0
0
40 80 120 160 200
PL (W)
VDS = 28 V; IDq = 1400 mA; f = 881 MHz.
Fig 3. Power gain and drain efficiency as function of output power; typical values
BLF10M6200_BLF10M6LS200
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 1 July 2013
© NXP B.V. 2013. All rights reserved.
5 of 12
5 Page 
NXP Semiconductors
BLF10M6200; BLF10M6LS200
Power LDMOS transistor
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
BLF10M6200_BLF10M6LS200
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 1 July 2013
© NXP B.V. 2013. All rights reserved.
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