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PDF 1SS196 Data sheet ( Hoja de datos )

Número de pieza 1SS196
Descripción SILICON EPITAXIAL PLANAR DIODE
Fabricantes Toshiba Semiconductor 
Logotipo Toshiba Semiconductor Logotipo



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No Preview Available ! 1SS196 Hoja de datos, Descripción, Manual

TOSHIBA Diode Silicon Epitaxial Planar Type
1SS196
1SS196
Ultra High-Speed Switching Applications
Unit: mm
z Small package: SC-59
z Low forward voltage: VF (3) = 0.9 V (typ.)
z Fast reverse recovery time: trr = 1.6 ns (typ.)
z Small total capacitance: CT = 0.9 pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Maximum (peak) reverse voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
Surge current (10ms)
Power dissipation
VRM
VR
IFM
IO
IFSM
P
85 V
80 V
300 mA
100 mA
2A
150 mW
Junction temperature
Tj 125 °C
Storage temperature range
Tstg
55 to 125
°C
JEDEC
TO-236MOD
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
JEITA
SC-59
TOSHIBA
1-3G1A
Weight: 0.012 g (typ.)
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Forward voltage
Reverse current
Total capacitance
Reverse recovery time
Symbol
VF (1)
VF (2)
VF (3)
IR (1)
IR (2)
CT
trr
Test
Circuit
Test Condition
IF = 1 mA
IF = 10 mA
IF = 100 mA
VR = 30 V
VR = 80 V
VR = 0, f = 1 MHz
IF = 10 mA (Fig.1)
Min Typ. Max Unit
0.60
0.72
V
0.90 1.20
― ― 0.1
μA
― ― 0.5
0.9 3.0 pF
1.6 4.0 ns
Marking
Start of commercial production
1982-05
1 2014-03-01

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