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Número de pieza | IPB160N04S4L-H1 | |
Descripción | Power-Transistor | |
Fabricantes | Infineon | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IPB160N04S4L-H1 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! Data Sheet
IPB160N04S4L-H1
OptiMOSTM-T2 Power-Transistor
Features
• N-channel Logic Level - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• 100% Avalanche tested
Product Summary
VDS
RDS(on)
ID
40 V
1.5 mΩ
160 A
PG-TO263-7-3
Type
IPB160N04S4L-H1
Package
PG-TO263-7-3
Marking
4N04LH1
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
I D T C=25°C, V GS=10V1)
T C=100 °C,
V GS=10 V2)
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=80 A
Avalanche current, single pulse
I AS -
Gate source voltage
V GS
-
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg -
IEC climatic category; DIN IEC 68-1 -
-
Value
160
160
640
400
160
+20/-16
167
-55 ... +175
55/175/56
Unit
A
mJ
A
V
W
°C
Rev. 1.0
page 1
2013-05-27
1 page Data Sheet
IPB160N04S4L-H1
5 Typ. output characteristics
I D = f(V DS); T j = 25 °C
parameter: V GS
640
10 V
4.5 V
480
6 Typ. drain-source on-state resistance
R DS(on) = (I D); T j = 25 °C
parameter: V GS
12
3V
3.5 V
4V
10
4V 8
320 6
3.5 V
4
160
2
3V
4.5 V
10 V
0
012345
VDS [V]
0
0 100 200 300 400 500 600
ID [A]
7 Typ. transfer characteristics
I D = f(V GS); V DS = 6V
parameter: T j
8 Typ. drain-source on-state resistance
R DS(on) = f(T j); I D = 100 A; V GS = 10 V
640
-55 °C 25 °C
2.5
480
175 °C
2
320 1.5
160 1
0
1
Rev. 1.0
234
VGS [V]
0.5
5 -60 -20 20 60 100 140 180
Tj [°C]
page 5
2013-05-27
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet IPB160N04S4L-H1.PDF ] |
Número de pieza | Descripción | Fabricantes |
IPB160N04S4L-H1 | Power-Transistor | Infineon |
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