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Datasheet IPB120N04S4L Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1IPB120N04S4L-02Power-Transistor

Data Sheet IPB120N04S4L-02 OptiMOSTM-T2 Power-Transistor Features • N-channel Logic Level - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Product Summary VDS RDS(on),max ID 40 V
Infineon
Infineon
transistor


IPB Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1IPB009N03LGMOSFET, Transistor

IPB009N03LG MOSFET OptiMOSª3Power-Transistor,30V Features •MOSFETforORingandUninterruptiblePowerSupply •QualifiedaccordingtoJEDEC1)fortargetapplications •N-channel •Logiclevel •Ultra-lowon-resistanceRDS(on) •100%Avalanchetested •Pb-freeplating;RoHScomp
Infineon Technologies
Infineon Technologies
mosfet
2IPB010N06NMOSFET, Transistor

IPB010N06N MOSFET OptiMOSTMPower-Transistor,60V Features •Optimizedforsynchronousrectification •100%avalanchetested •Superiorthermalresistance •N-channel,normallevel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Hal
Infineon
Infineon
mosfet
3IPB011N04LGOptiMOS3 Power Transistor

Jf^S $  "   "%&$!"#E  $ ;B 1= '= -: >5 >? ;= 6MI[\YMZ R' ) -  . 8 AC ) ,; @9 3 @6 / @; @E 7C C FBE ; 4> 7 * AH7C - FBB> J R + F3 > ; 8 ; 76 3 55AC 6; @9 E A$     R( 5: 3 @@7> R& A9; 5> 7G 7> R/ > E C 3 > AH A@ C 7D ; D E 3 @57 ' 9I"]\# )# $= ;0@/?& @9 9 -= D ) 9I '  - A@
Infineon Technologies
Infineon Technologies
transistor
4IPB011N04NGOptiMOS3 Power Transistor

Ie]R #  !  !  "%&$!"#D  # : A 0< & < ,9=4 => :< 6LHZ[XLY Q& ( ,  - 7 @B ( + :? 8 2 ? 5 . ? :? D 6B B EAD :3 = 6 ) @G6B , EAA= I Q * E2 = :7 :65 2 44@B 5:? 8 D @ $    Q' 492 ? ? 6= Q' @B >2 = = 6F 6= Q. = D B 2 = @G @? B 6C :C D 2 ? 46 ' 9H"\[# Q F 2= 2 ? 496 B 2D 65 Q ) 3 7
Infineon Technologies
Infineon Technologies
transistor
5IPB014N06NPower Transistor

Type OptiMOSTM Power-Transistor Features • Optimized for synchronous rectification • 100% avalanche tested • Superior thermal resistance • N-channel, normal level • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Halogen-free according t
Infineon Technologies
Infineon Technologies
transistor
6IPB015N04LGOptiMOS3 Power Transistor

Jg_T $   "   "%&$!"#E  $ ;B 1= '= -: >5 >? ;= 6MI[\YMZ S 4E FE I< F 6;< A: ' ) -  . 9 BD- ' * S) C F < @< L 87 F 86;AB?B: K 9 BD    6BAH 8D F 8D E S+ G 4?< 9 < 87 466BD 7< A: F B$    S( 6;4AA8? ?B: < 6 ?8H 8? S J68??8AF: 4F 8 6;4D : 8 J ' 9I"^]# C D B7G 6F ) '  S/ 8D K
Infineon Technologies
Infineon Technologies
transistor
7IPB015N04NGOptiMOS3 Power Transistor

Type IPP015N04N G IPB015N04N G OptiMOS™3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC for target applications • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low
Infineon Technologies
Infineon Technologies
transistor



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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Sanken
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