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PDF BFQ790 Data sheet ( Hoja de datos )
| Número de pieza | BFQ790 | |
| Descripción | High Linearity High Gain 1/2 Watt RF Driver Amplifier | |
| Fabricantes | Infineon | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BFQ790 (archivo pdf) en la parte inferior de esta página. Total 30 Páginas | ||
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BFQ790
High Linearity High Gain 1/2 Watt RF Driver Amplifier
Data Sheet
Revision 2.0, 2014-08-26
Preliminary
RF & Protection Devices
1 page  
BFQ790
List of Figures
List of Figures
Figure 5-1 Absolute Maximum Power Dissipation Pdiss,max vs. Ts . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Figure 7-1 BFQ790 Testing Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 7-2 Collector Current IC vs. VCE, IB = Parameter. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Figure 7-3 DC Current Gain hFE vs. IC at VCE = 5 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Figure 7-4 Collector Emitter Breakdown Voltage BVCER vs. Resistor R_B/GND . . . . . . . . . . . . . . . . . . . . . . 18
Figure 7-5 Transition Frequency fT vs. IC, VCE = Parameter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Figure 7-6 Collector Base Capacitance CCB vs. IC at f = 30 MHz, VCB = Parameter . . . . . . . . . . . . . . . . . . . 19
Figure 7-7 Gain Gms, Gma, IS21I² vs. f at VCE = 5 V, IC = 250 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Figure 7-8 Maximum Power Gain Gmax vs. IC at VCE = 5 V, f = Parameter . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Figure 7-9 Maximum Power Gain Gmax vs. VCE at IC = 250 mA, f = Parameter . . . . . . . . . . . . . . . . . . . . . . 21
Figure 7-10 Output Reflection Coefficient S22 vs. f at VCE = 5 V, IC = Parameter . . . . . . . . . . . . . . . . . . . . . . . 21
Figure 7-11 Input Reflection Coefficient S11 vs. f at VCE = 5 V, IC = Parameter . . . . . . . . . . . . . . . . . . . . . . . . . 22
Figure 7-12 Source Impedance ZSopt for Minimum Noise Figure vs. f at VCE = 5V, IC = Parameter . . . . . . . . . 22
Figure 7-13 Noise Figure NFmin vs. f at VCE = 5 V, ZS = ZSopt, IC = Parameter . . . . . . . . . . . . . . . . . . . . . . . . . 23
Figure 7-14 Noise Figure NFmin vs. IC at VCE = 5 V, ZS = ZSopt, f = Parameter . . . . . . . . . . . . . . . . . . . . . . . . 23
Figure 7-15 Noise Figure NF50 vs. IC at VCE = 5 V, ZS = 50 Ω, f = Parameter . . . . . . . . . . . . . . . . . . . . . . . . . 24
Figure 7-16 Load Pull Contour OP1dB [dBm] at VCE = 5 V, IC = 250 mA, f = 0.9 GHz, ZI = Zopt . . . . . . . . . . . . . 24
Figure 7-17 Load Pull Contour OIP3 [dBm] at VCE = 5 V, IC = 250 mA, f = 0.9 GHz, ZI = Zopt . . . . . . . . . . . . . 25
Figure 7-18 Load Pull Contour Gain G [dB] at VCE = 5 V, IC = 250 mA, f = 0.9 GHz, ZI = Zopt. . . . . . . . . . . . . . 25
Figure 7-19 Pout, Gain, IC, PAE vs. Pin at VCE = 5 V, ICq = 155 mA, f = 0.9 GHz, ZI = Zopt . . . . . . . . . . . . . . . . 26
Figure 7-20 Pout, Gain, IC, PAE vs. Pin at VCE = 5 V, ICq = 250 mA, f = 0.9 GHz, ZI = Zopt . . . . . . . . . . . . . . . . 26
Figure 7-21 Pout, Gain, IC, PAE vs. Pin at VCE = 5 V, ICq = 250 mA, f = 2.6 GHz, ZI = Zopt . . . . . . . . . . . . . . . . 27
Figure 7-22 OIP3 vs. IC at VCE = 5 V, f = 0.9 GHz, ZL = ZLopt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Figure 9-1 Package Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Figure 9-2 Package Footprint. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Figure 9-3 Marking Example (Marking BFQ790: R3). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Figure 9-4 Tape Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Preliminary Data Sheet
5 Revision 2.0, 2014-08-26
5 Page 
5 Thermal Characteristics
BFQ790
Thermal Characteristics
Table 5-1 Thermal Resistance
Parameter
Symbol
Junction - soldering point RTHJS
Min.
–
Values
Typ.
35
Max.
–
Unit Note / Test Condition
K/W –
1600
1400
1200
1000
800
600
400
200
0
0 20 40 60 80 100 120 140 160
TS [°C]
Figure 5-1 Absolute Maximum Power Dissipation Pdiss,max vs. Ts
Note: In the horizontal part of the derating curve the maximum power dissipation is given by Pdiss,max=VCE,max*IC,max.
In this part the junction temperature TJ is lower than TJ,max. In the declining slope it is TJ=TJ,max, Pdiss,max has
to be reduced according to the curve in order not to exceed TJ,max. It is TJ,max=TS+Pdiss,max*RTHJS.
Preliminary Data Sheet
11 Revision 2.0, 2014-08-26
11 Page | ||
| Páginas | Total 30 Páginas | |
| PDF Descargar | [ Datasheet BFQ790.PDF ] | |
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