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PDF IPZ40N04S5L-2R8 Data sheet ( Hoja de datos )
| Número de pieza | IPZ40N04S5L-2R8 | |
| Descripción | Power-Transistor | |
| Fabricantes | Infineon | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IPZ40N04S5L-2R8 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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IPZ40N04S5L-2R8
OptiMOS™-5 Power-Transistor
Product Summary
Features
• OptiMOS™ - power MOSFET for automotive applications
VDS
RDS(on),max
ID
40 V
2.8 mW
40 A
PG-TSDSON-8
• N-channel - Enhancement mode - Logic Level
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
1
• 175°C operating temperature
• Green Product (RoHS compliant)
1
• 100% Avalanche tested
Type
IPZ40N04S5L-2R8
Package
PG-TSDSON-8
Marking
5N04L28
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25°C, V GS=10V
T C=100°C, V GS=10V2)
Pulsed drain current2)
Avalanche energy, single pulse2)
Avalanche current, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
I D,pulse T C=25°C
E AS I D=20A
I AS -
V GS
-
P tot T C=25°C
T j, T stg -
Value
40
40
160
140
40
±16
71
-55 ... +175
Unit
A
mJ
A
V
W
°C
Rev. 1.0
page 1
2015-05-06
1 page  
IPZ40N04S5L-2R8
5 Typ. output characteristics
I D = f(V DS); T j = 25 °C
parameter: V GS
160
10 V 3.5 V
120
80
6 Typ. drain-source on-state resistance
R DS(on) = f(I D); T j = 25 °C
parameter: V GS
12
2.5 V
2.75 V
3V
10
8
3V
6
2.75 V
40
2.5 V
0
012
VDS [V]
7 Typ. transfer characteristics
I D = f(V GS); V DS = 6V
parameter: T j
160
4 3.5 V
10 V
2
0
30
40 80 120
ID [A]
8 Typ. drain-source on-state resistance
R DS(on) = f(T j); I D = 20 A; V GS = 10 V
160
5
120 4
80
40
0
1.5
Rev. 1.0
175 °C
25 °C
-55 °C
2 2.5 3
VGS [V]
3
2
3.5 1
-60 -20 20 60 100 140 180
Tj [°C]
page 5
2015-05-06
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IPZ40N04S5L-2R8.PDF ] | |
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