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PDF LE25S161 Data sheet ( Hoja de datos )

Número de pieza LE25S161
Descripción 16 Mb (2048K x 8) Serial Flash Memory
Fabricantes ON Semiconductor 
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No Preview Available ! LE25S161 Hoja de datos, Descripción, Manual

LE25S161
Serial Flash Memory
16 Mb (2048K x 8)
1. Overview
The LE25S161 is a SPI bus flash memory device with a 16M bit (2048K
8-bit) configuration. It uses a single power supply. While making the most
of the features inherent to a serial flash memory device, the LE25S161 is
housed in an 8-pin ultra-miniature package. All these features make this
device ideally suited to storing program in applications such as portable
information devices, which are required to have increasingly more
compact dimensions.
The LE25S161 also has a small sector erase capability which makes the
device ideal for storing parameters or data that have fewer rewrite cycles
and conventional EEPROMs cannot handle due to insufficient capacity.
www.onsemi.com
SOIC 8, 150mils
VSOIC8 NB
WLCSP8, 2.92x1.53
UDFN8 4x3, 0.8P
2. Features
Operations power supply : 1.65 to 1.95V supply voltage range
Operating frequency
: 70MHz (max)
Temperature range
: –40 to +90C
Serial interface
: SPI mode 0, mode 3 supported
Electronic Identification : JDEC ID, Device ID, Serial Flash Discoverable Parameter (SFDP)
Sector size
: 4K bytes/small sector, 64K bytes/sector
Erase functions
: small sector erase (SSE), sector erase (SE), chip erase (CHE)
Page program function
: 256 bytes/page
Status functions
: Ready/Busy information, protect information
Low operation current
: 5.0mA (Low-power program mode, typ), 3.5mA (Low-Power Read mode, typ)
Erase time
: 10ms (SSE, typ), 15ms (SE, typ), 210ms (CHE, typ)
Page program time (tPP) : 0.4ms/256 bytes (typ.), 0.7ms/256 bytes (max.)
Emergency shutdown of the current consumption
: transition to a standby state in less than 20s from the active by Write Suspend
: transition to a standby state in less than 40s from the active by Software Reset
High reliability
: 100,000 erase/program cycles
: 20 years data retention period
Package
: LE25S161MDTWG SOIC 8, 150 mils CASE 751BD
: LE25S161FDTWG VSOIC8 NB
CASE 753AA
: LE25S161XATAG WLCSP8, 2.921.53 CASE 567LC
: LE25S161PCTXG UDFN8 43, 0.8P CASE 506DC
: KGD
N/A
* This product is licensed from Silicon Storage Technology, Inc. (USA).
ORDERING INFORMATION
See detailed ordering and shipping information on page 54 of this data sheet.
© Semiconductor Components Industries, LLC, 2016
February 2016 - Rev. 1
1
Publication Order Number :
LE25S161/D

1 page




LE25S161 pdf
LE25S161
Package Dimensions
unit : mm
LE25S161FDTWG
VSOIC8 NB
CASE 753AA
ISSUE O
D
8
A NOTE 5
2X
5 0.10 C D
F
E E1 NOTE 4
2X 4 TIPS
0.20 C
1
NOTE 5 B
L2
4
8X b
0.25 M C A-B D
TOP VIEW
L
DETAIL A
NOTE 6
A1
C
SEATING
PLANE
0.10 C
NOTE 4
D
2X
0.10 C A-B
8X
0.10 C
DETAIL A
Ae
SIDE VIEW
C
SEATING
PLANE
END VIEW
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE PROTRUSION SHALL
BE 0.10mm IN EXCESS OF MAXIMUM MATERIAL
CONDITION.
4. DIMENSION D DOES NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS. MOLD FLASH,
PROTRUSIONS, OR GATE BURRS SHALL NOT
EXCEED 0.15mm PER SIDE. DIMENSION E DOES
NOT INCLUDE INTERLEAD FLASH OR
PROTRUSION. INTERLEAD FLASH OR
PROTRUSION SHALL NOT EXCEED 0.25mm PER
SIDE. DIMENSIONS D AND E ARE DETERMINED AT
DATUM F.
5. DATUMS A AND B ARE TO BE DETERMINED AT
DATUM F.
6. A1 IS DEFINED AS THE VERTICAL DISTANCE
FROM THE SEATING PLANE TO THE LOWEST
POINT ON THE PACKAGE BODY.
MILLIMETERS
DIM MIN MAX
A 0.65 0.85
A1 0.05
b 0.31 0.51
c 0.17 0.25
D 4.90 BSC
E 6.00 BSC
E1 3.90 BSC
e 1.27 BSC
L 0.40 1.27
L2 0.25 BSC
RECOMMENDED
SOLDERING FOOTPRINT*
GENERIC
MARKING DIAGRAM*
8
XXXXXXXXX
ALYWX
8X 1.52
7.00
1
1.27
PITCH
8X
0.60
DIMENSION: MILLIMETERS
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
1
XXXXX = Specific Device Code
A = Assembly Location
L = Wafer Lot
Y = Year
W = Work Week
= Pb-Free Package
(Note: Microdot may be in either location)
*This information is generic. Please refer
to device data sheet for actual part
www.onsemi.com
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LE25S161 arduino
LE25S161
Table 1-1. Command Settings (Standard SPI) --- Max: 70MHz (except RDLP)
Command
WREN
Description
(clock number)
Write enable
1st byte
(0 - 7)
06h
2nd byte
(8 - 15)
3rd byte
(16- 23)
4th byte
(24 - 31)
5th byte
(32 - 39)
WRDI
Write disable
04h
RDSR
Read Status Register
05h
WRSR
RDLP
RDHS
Write Status Register
Low -Power Read
(Max: 33.33MHz)
High-Speed Read
01h DATA
03h
A23-A16
A15-A8
A7-A0
0Bh
A23-A16
A15-A8
A7-A0
RD (5)
X
SSE
Small Sector Erase (4KB)
20h / D7h
A23-A16
A15-A8
A7-A0
SE Sector Erase (64KB)
D8h
A23-A16
A15-A8
A7-A0
CHE
Chip Erase (16M bits)
60h / C7h
PP Normal Page Program
02h
A23-A16
A15-A8
A7-A0
PPL Low-Power Page Program
0Ah
PD (7)
WSUS Write Suspend
B0h
RESM
RJID
RID
RSFDP
Resume
Read JEDEC ID
Read Device ID
(Exit power down mode)
Read SFDP
30h
Manufacture
Memory
Capacity
9Fh
(62h)
Type (16h)
(15h)
Device ID
ABh X X X
(88h)
5Ah
A23-A16
A15-A8
A7-A0
X
DP
EDP
RSTEN
Deep Power down
Exit Deep
Power down
Reset Enable
B9h
ABh
66h
RST
Reset
99h
6th byte
(40 - 47)
Nth byte
(8N-8 to 8N-1)
RD (5)
RD (5)
RD (5)
RD (5)
PD (7)
PD (7)
RD (5)
RD (5)
Table 1-2. Command Settings (Dual SPI) --- Max: 50MHz
Command
RDDO
Description
(clock number)
Dual Output Read
RDIO
Dual I/O Read
1st byte
(0 - 7)
3Bh
BBh
2nd byte
(8 - 15)
A23-A16
A23-A8(8)
3rd byte
(16- 23)
A15-A8
A7-A0(8),
X, Z
4th byte
(24 - 31)
A7-A0
RDD (6)
5th byte
(32 - 39)
Z
RDD (6)
6th byte
(40 - 47)
RDD (6)
RDD (6)
Nth byte
(8N-8 to 8N-1)
RDD (6)
RDD (6)
Note:
1. "X" signifies "don’t care" (that is to say, any value may be input).
2. "Z" signifies "high-impedance".
3. The "h" following each code indicates that the number given is in hexadecimal notation.
4. Addresses A23 to A21 for all commands are "Don't care".
5. "RD" Read data on SO.
6. "RDD" Dual Read data:
SIO0=(Bit6, Bit4, Bit2, Bit0)
SIO1=(Bit7, Bit5, Bit3, Bit1)
7. "PD" Page Program data on SO.
8. Dual SPI address input from SIO0 and SIO1:
SIO0=(A22, A20, A18, A16, A14, A12, A10, A8, A6, A4, A2, A0)
SIO1=(A23, A21, A19, A17, A15, A13, A11, A9, A7, A5, A3, A1)
www.onsemi.com
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