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PDF EMH2407 Data sheet ( Hoja de datos )

Número de pieza EMH2407
Descripción N-Channel Power MOSFET / Transistor
Fabricantes ON Semiconductor 
Logotipo ON Semiconductor Logotipo



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No Preview Available ! EMH2407 Hoja de datos, Descripción, Manual

Ordering number : ENA1141D
EMH2407
N-Channel Power MOSFET
20V, 6A, 25mΩ, Dual EMH8
http://onsemi.com
Features
Low ON-resistance
Best suited for LiB charging and discharging switch
Common-drain type
2.5V drive
Protection diode in
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
PT
Tch
Tstg
Conditions
PW10μs, duty cycle1%
When mounted on ceramic substrate (900mm2×0.8mm) 1unit
When mounted on ceramic substrate (900mm2×0.8mm)
Ratings
20
±12
6
40
1.3
1.4
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7045-006
0.2
8
5
0.125 EMH2407-TL-H
Product & Package Information
• Package
: EMH8
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
1
0.5
2.0
4
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain
6 : Drain
7 : Drain
8 : Drain
EMH8
LG
TL LOT No.
Electrical Connection
8765
1234
Semiconductor Components Industries, LLC, 2013
July, 2013
91212 TKIM/51612 TKIM/90308 TIIM/80608 TIIM/31908PE TIIM TC-00001276 No. A1141-1/7

1 page




EMH2407 pdf
Embossed Taping Specication
EMH2407-TL-H
EMH2407
No. A1141-5/7

5 Page










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