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PDF VS-175BGQ030 Data sheet ( Hoja de datos )
| Número de pieza | VS-175BGQ030 | |
| Descripción | High Performance Schottky Rectifier | |
| Fabricantes | Vishay | |
| Logotipo |  |
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www.vishay.com
VS-175BGQ030
Vishay Semiconductors
High Performance Schottky Rectifier, 175 A
Cathode
Anode
PowerTab®
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
IRM
TJ max.
Diode variation
EAS
PowerTab®
175 A
30 V
0.52 V
650 mA at 125 °C
125 °C
Single die
80 mJ
FEATURES
• 150 °C max. operating junction temperature
• High frequency operation
• Ultralow forward voltage drop
• Continuous high current operation
• Guard ring for enhanced ruggedness and long
term reliability
• Screw mounting only
• Designed and qualified according to JEDEC®-JESD 47
• PowerTab® package
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-175BGQ030 Schottky rectifier has been optimized
for ultralow forward voltage drop specifically for low voltage
output in high current AC/DC power supplies.
The proprietary barrier technology allows for reliable
operation up to 150 °C junction temperature. Typical
applications are in switching power supplies, converters,
reverse battery protection, and redundant power
subsystems.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
Rectangular waveform
TC
VRRM
IFSM
VF
tp = 5 μs sine
175 Apk (typical)
TJ
TJ Range
VALUES
175
112
30
7400
0.47
150
-55 to +150
UNITS
A
°C
V
A
V
°C
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
VR
VRWM
VS-175BGQ030
30
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
IF(AV)
Maximum peak one cycle
non-repetitive surge current
IFSM
Non-repetitive avalanche energy
Repetitive avalanche current
EAS
IAR
TEST CONDITIONS
50 % duty cycle at TC = 112 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated load
condition and with rated
VRRM applied
TJ = 25 °C, IAS = 12 A, L = 1.12 mH
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
VALUES
175
7400
1400
80
12
UNITS
A
A
mJ
A
Revision: 16-Jun-15
1 Document Number: 94583
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
DIMENSIONS in millimeters (inches)
15.90 (0.62)
15.60 (0.61)
15.60 (0.61)
14.80 (0.58)
PowerTab®
Outline Dimensions
Vishay Semiconductors
1.35 (0.05)
1.20 (0.04)
Lead 1
Lead 2
Ø 4.20 (Ø 0.16)
Ø 4.00 (Ø 0.15)
Ø 4.20 (Ø 0.16)
Ø 4.00 (Ø 0.15)
5.45 REF.
(0.21 REF.)
Lead assignments
Lead 1 = Cathode
Lead 2 = Anode
3.09 (0.12)
3.00 (0.11)
0.60 (0.02)
0.40 (0.01)
1.30 (0.05)
1.10 (0.04)
12.20 (0.48)
12.00 (0.47)
Revision: 08-Jun-15
1 Document Number: 95240
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet VS-175BGQ030.PDF ] | |
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