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PDF BCW69LT1 Data sheet ( Hoja de datos )

Número de pieza BCW69LT1
Descripción General Purpose Transistors
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BCW69LT1
General Purpose
Transistors
PNP Silicon
MAXIMUM RATINGS
Rating
CollectorEmitter Voltage
EmitterBase Voltage
Collector Current — Continuous
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to
Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to
Ambient
Junction and Storage Temperature
Symbol
VCEO
VEBO
IC
Value
45
5.0
100
Unit
Vdc
Vdc
mAdc
Symbol
PD
RθJA
Max
225
1.8
556
Unit
mW
mW/°C
°C/W
PD
RθJA
300 mW
2.4 mW/°C
417 °C/W
TJ, Tstg 55 to +150
°C
http://onsemi.com
3
1
2
CASE 318 08, STYLE 6
SOT23 (TO 236AB)
COLLECTOR
3
1
BASE
2
EMITTER
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0)
CollectorEmitter Breakdown Voltage (IC = 100 μAdc, VEB = 0)
EmitterBase Breakdown Voltage (IE = 10 μAdc, IC = 0)
Collector Cutoff Current
(VCB = 20 Vdc, IE = 0)
(VCB = 20 Vdc, IE = 0, TA = 100°C)
1. FR5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina
Symbol
V(BR)CEO
V(BR)CES
V(BR)EBO
ICBO
Min
45
50
5.0
Max
100
10
Unit
Vdc
Vdc
Vdc
nAdc
μAdc
© Semiconductor Components Industries, LLC, 2006
August, 2006 Rev. 2
1
Publication Order Number:
BCW69LT1/D

1 page




BCW69LT1 pdf
BCW69LT1
TYPICAL DYNAMIC CHARACTERISTICS
500
300
200
100
70
50
30
20
10
7.0
5.0
1.0
VCC = 3.0 V
IC/IB = 10
TJ = 25°C
1000
700
500
300
200
VCC = − 3.0 V
IC/IB = 10
ts
IB1 = IB2
TJ = 25°C
td @ VBE(off) = 0.5 V
tr
2.0 3.0 5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
Figure 10. TurnOn Time
50 70 100
100
70
50
tf
30
20
10
−1.0
− 2.0 − 3.0 − 5.0 − 7.0 −10 − 20 − 30
IC, COLLECTOR CURRENT (mA)
Figure 11. TurnOff Time
− 50 − 70 −100
500
TJ = 25°C
300 VCE = 20 V
5.0 V
200
100
70
50
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20 30 50
IC, COLLECTOR CURRENT (mA)
Figure 12. CurrentGain — Bandwidth Product
10
TJ = 25°C
7.0
Cib
5.0
3.0
2.0 Cob
1.0
0.05 0.1
0.2 0.5 1.0 2.0 5.0 10
VR, REVERSE VOLTAGE (VOLTS)
Figure 13. Capacitance
20
50
1.0
0.7
0.5
D = 0.5
0.3 0.2
0.2
0.1
0.1
0.07 0.05
0.05
0.02
0.03
0.02 0.01
SINGLE PULSE
0.01
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0
P(pk)
FIGURE 16
t1
t2
DUTY CYCLE, D = t1/t2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1 (SEE AN569)
ZθJA(t) = r(t) RθJA
TJ(pk) TA = P(pk) ZθJA(t)
5.0 10 20 50 100 200
t, TIME (ms)
500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 1k00 k
Figure 14. Thermal Response
http://onsemi.com
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