|
|
Número de pieza | BCW69LT1 | |
Descripción | General Purpose Transistors | |
Fabricantes | ON Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BCW69LT1 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! BCW69LT1
General Purpose
Transistors
PNP Silicon
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current — Continuous
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to
Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to
Ambient
Junction and Storage Temperature
Symbol
VCEO
VEBO
IC
Value
−45
−5.0
−100
Unit
Vdc
Vdc
mAdc
Symbol
PD
RθJA
Max
225
1.8
556
Unit
mW
mW/°C
°C/W
PD
RθJA
300 mW
2.4 mW/°C
417 °C/W
TJ, Tstg − 55 to +150
°C
http://onsemi.com
3
1
2
CASE 318 −08, STYLE 6
SOT−23 (TO −236AB)
COLLECTOR
3
1
BASE
2
EMITTER
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (IC = −2.0 mAdc, IB = 0)
Collector−Emitter Breakdown Voltage (IC = −100 μAdc, VEB = 0)
Emitter−Base Breakdown Voltage (IE = −10 μAdc, IC = 0)
Collector Cutoff Current
(VCB = −20 Vdc, IE = 0)
(VCB = −20 Vdc, IE = 0, TA = 100°C)
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina
Symbol
V(BR)CEO
V(BR)CES
V(BR)EBO
ICBO
Min
−45
−50
−5.0
—
—
Max
—
—
—
−100
−10
Unit
Vdc
Vdc
Vdc
nAdc
μAdc
© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 2
1
Publication Order Number:
BCW69LT1/D
1 page BCW69LT1
TYPICAL DYNAMIC CHARACTERISTICS
500
300
200
100
70
50
30
20
10
7.0
5.0
1.0
VCC = 3.0 V
IC/IB = 10
TJ = 25°C
1000
700
500
300
200
VCC = − 3.0 V
IC/IB = 10
ts
IB1 = IB2
TJ = 25°C
td @ VBE(off) = 0.5 V
tr
2.0 3.0 5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
Figure 10. Turn−On Time
50 70 100
100
70
50
tf
30
20
10
−1.0
− 2.0 − 3.0 − 5.0 − 7.0 −10 − 20 − 30
IC, COLLECTOR CURRENT (mA)
Figure 11. Turn−Off Time
− 50 − 70 −100
500
TJ = 25°C
300 VCE = 20 V
5.0 V
200
100
70
50
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20 30 50
IC, COLLECTOR CURRENT (mA)
Figure 12. Current−Gain — Bandwidth Product
10
TJ = 25°C
7.0
Cib
5.0
3.0
2.0 Cob
1.0
0.05 0.1
0.2 0.5 1.0 2.0 5.0 10
VR, REVERSE VOLTAGE (VOLTS)
Figure 13. Capacitance
20
50
1.0
0.7
0.5
D = 0.5
0.3 0.2
0.2
0.1
0.1
0.07 0.05
0.05
0.02
0.03
0.02 0.01
SINGLE PULSE
0.01
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0
P(pk)
FIGURE 16
t1
t2
DUTY CYCLE, D = t1/t2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1 (SEE AN−569)
ZθJA(t) = r(t) • RθJA
TJ(pk) − TA = P(pk) ZθJA(t)
5.0 10 20 50 100 200
t, TIME (ms)
500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 1k00 k
Figure 14. Thermal Response
http://onsemi.com
5
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet BCW69LT1.PDF ] |
Número de pieza | Descripción | Fabricantes |
BCW69LT1 | General Purpose Transistors | Motorola Inc |
BCW69LT1 | General Purpose Transistors | Leshan Radio Company |
BCW69LT1 | PNP EPITAXIAL SILICON TRANSISTOR | Yiguang Electronic |
BCW69LT1 | General Purpose Transistors | ON Semiconductor |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |