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PDF EM428M1644RTA Data sheet ( Hoja de datos )
| Número de pieza | EM428M1644RTA | |
| Descripción | Double DATA RATE SDRAM | |
| Fabricantes | Eorex | |
| Logotipo |  |
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eorex
EM428M1644RTA
128Mb (2M×4Bank×16)
Double DATA RATE SDRAM
Features
• Internal Double-Date-Rate architecture with 2
Accesses per clock cycle.
• VDD/VDDQ= 2.5V ±0.2V for (-75 and -6)
• VDD/VDDQ= 2.6V ±0.1V for (-5 )
• 2.5V SSTL-2 compatible I/O
• Burst Length (B/L) of 2, 4, 8
• 2,2.5,3 Clock read latency
• Bi-directional,intermittent data strobe(DQS)
• All inputs except data and DM are sampled
at the positive edge of the system clock.
• Data Mask (DM) for write data
• Sequential & Interleaved Burst type available
• Auto Precharge option for each burst accesses
• DQS edge-aligned with data for Read cycles
• DQS center-aligned with data for Write cycles
• DLL aligns DQ & DQS transitions with CLK’s
• Auto Refresh and Self Refresh
• 4,096 Refresh Cycles / 64ms
Ordering Information
Description
The EM428M1644RTA is high speed Synchronous
graphic RAM fabricated with ultra high performance
CMOS process containing 134,217,728 bits which
organized as 2Meg words x 4 banks by 16 bits.
The 128Mb DDR SDRAM uses a double data rate
architecture to accomplish high-speed operation.
The data path internally prefetches multiple bits and
It transfers the datafor both rising and falling edges
of the system clock.It means the doubled data
bandwidth can be achieved at the I/O pins.
Available packages:TSOPII 66P 400mil.
Part No
EM428M1644RTA-75F
EM428M1644RTA-6F
EM428M1644RTA-5F
Organization Max. Freq
8M X 16
133MHz @CL2.5
8M X 16
166MHz @CL2.5
8M X 16
200MHz @CL3
EM 42 8M 16 4 4 R T A - X F E
Package
66pin TSOP(ll)
66pin TSOP(ll)
66pin TSOP(ll)
Grade
Commercial
Commercial
Commercial
Pb
Free
Free
Free
EOREX Memory
DDR SDRAM
Density
BM: 32 Mega
AM: 16 Mega
8M: 8 Mega
4M: 4 Mega
2M: 2 Mega
1M: 1 Mega
Organization
16: x16
Refresh
4: 4K
Bank
4: 4Bank
Grade
E: extended temp.
Package
F: Pb-free
Min Cycle Time (Max Freq.)
-5: 5ns (200MHz)
-6: 6ns (166MHz)
-75: 7.5ns (133MHz)
Revision
A: 1st
Package
T: TSOP
Interface
R: 2.5V
Apr. 2007
1/20
www.eorex.com
1 page  
eorex
EM428M1644RTA
Absolute Maximum Rating
Symbol
Item
Rating
Units
VIN, VOUT
Input, Output Voltage
-0.3 ~ +3.6
V
VDD, VDDQ
Power Supply Voltage
-0.3 ~ +3.6
V
TOP Operating Temperature Range
Commercial
Extended
0 ~ +70
-25 ~ +85
°C
TSTG
Storage Temperature Range
-55 ~ +150
°C
PD Power Dissipation
1W
IOS Short Circuit Current
50 mA
Note: Caution Exposing the device to stress above those listed in Absolute Maximum Ratings could
cause permanent damage. The device is not meant to be operated under conditions outside the
limits described in the operational section of this specification. Exposure to Absolute Maximum
Rating conditions for extended periods may affect device reliability.
Capacitance (VCC=2.5V, f=1MHz, TA=25°C)
Symbol
Parameter
Min. Typ. Max. Units
CCLK
CI
CO
Clock Capacitance(CLK,/CLK)
Input Capacitance for CKE, Address, /CS,
/RAS, /CAS, /WE
DM,Data&DQS Input/Output Capacitance
2.5
2.5
4.0
4.0 pF
4.5 pF
6.5 pF
Recommended DC Operating Conditions (TA=-0°C ~+70°C)
Symbol
VDD
VDDQ
VREF
VTT
VIH
VIL
Parameter
Power Supply Voltage
Power Supply Voltage (for I/O Buffer)
I/O Logic high Voltage
I/O Termination Voltage
Input Logic High Voltage
Input Logic Low Voltage
Min.
2.3
2.3
1.15
VREF-0.04
VREF+0.18
-0.3
Typ.
2.5
2.5
1.25
Max.
2.7
2.7
1.35
VREF+0.04
VDDQ+0.3
VREF-0.18
Units
V
V
V
V
V
V
Apr. 2007
5/20
www.eorex.com
5 Page 
eorex
EM428M1644RTA
1. Command Truth Table
Command
Symbol
CKE
n-1 n
/CS
/RAS
/CAS
/WE
BA0,
BA1
A10
A12~A0
Ignore Command
DESL H X H X
X XXX
X
No Operation
NOP H X L H
H HXX
X
Burst Stop
BSTH H X L H H L X X
X
Read
READ H X L H
L HVL
V
Read with Auto Pre-charge READA H X L H
L HVH
V
Write
WRIT H X L H L L V L
V
Write with Auto Pre-charge WRITA H X L L
H HVH
V
Bank Activate
ACT H X L L
H HVV
V
Pre-charge Select Bank
PRE H X L L
H L VL
X
Pre-charge All Banks
PALL H X L L
H L XH
X
Mode Register Set
MRS H X L L
L LLL
V
H = High level, L = Low level, X = High or Low level (Don't care), V = Valid data input
2. CKE Truth Table
Item
Command
Symbol CKE /CS /RAS /CAS /WE Addr.
n-1 n
Idle
CBR Refresh Command
REF H H L L
LH
X
Idle Self Refresh Entry
SELF H L L L
LH
X
Self Refresh Self Refresh Exit
LH L
LHH
H
X
HH
XX
X
X
Idle Power Down Entry
HL X X
XX
X
Power Down Power Down Exit
LHX X
XX
X
Remark H = High level, L = Low level, X = High or Low level (Don't care)
Apr. 2007
11/20
www.eorex.com
11 Page | ||
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