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PDF SBE812 Data sheet ( Hoja de datos )

Número de pieza SBE812
Descripción Schottky Barrier Diode
Fabricantes ON Semiconductor 
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No Preview Available ! SBE812 Hoja de datos, Descripción, Manual

Ordering number : EN8966A
SBE812
Schottky Barrier Diode
60V, 1A, Low IR, Non-Monolithic Dual VEC8 Common Cathode
http://onsemi.com
Applications
High frequency rectication (switching regulators, converters, choppers)
Features
Small switching noise
Low leakage current and high reliability due to highly reliable planar structure
Ultrasmall package allows applied sets to be made small and thin
Specications
Absolute Maximum Ratings at Ta=25°C (Value per element)
Parameter
Symbol
Conditions
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
VRRM
VRSM
IO
IFSM
Tj
50Hz sine wave, 1 cycle
Storage Temperature
Tstg
Ratings
60
65
1.0
10
--55 to +125
--55 to +125
Unit
V
V
A
A
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7012-001
8 7 65
0.3
0.15 SBE812-TL-E
Product & Package Information
• Package
: VEC8
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
1234
0.65
2.9
1 : Anode1
2 : No Contact
3 : Anode2
4 : No Contact
5 : Cathode2
6 : Cathode2
7 : Cathode1
8 : Cathode1
VEC8
SA
LOT No.
TL
Electrical Connection
8765
1234
Semiconductor Components Industries, LLC, 2013
September, 2013
91912 TKIM/D2605SB MSIM TB-00002015 No.8966-1/6

1 page




SBE812 pdf
Outline Drawing
SBE812-TL-E
SBE812
Land Pattern Example
Mass (g) Unit
0.015
* For reference
mm
0.4
Unit: mm
0.65
No.8966-5/6

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