DataSheet.es    


PDF BUT11AF Data sheet ( Hoja de datos )

Número de pieza BUT11AF
Descripción High Voltage NPN Power Transistor
Fabricantes ON Semiconductor 
Logotipo ON Semiconductor Logotipo



Hay una vista previa y un enlace de descarga de BUT11AF (archivo pdf) en la parte inferior de esta página.


Total 8 Páginas

No Preview Available ! BUT11AF Hoja de datos, Descripción, Manual

ON Semiconductort
FULL PAKt
High Voltage NPN Power Transistor
For Isolated Package Applications
The BUT11AF was designed for use in line operated switching
power supplies in a wide range of end use applications. This device
combines the latest state of the art bipolar fabrication techniques to
provide excellent switching, high voltage capability and low
saturation voltage.
1000 Volt VCES Rating
Low Base Drive Requirements
Isolated Overmold Package
Improved System Efficiency
No Isolating Washers Required
Reduced System Cost
High Isolation Voltage Capability (4500 VRMS)
BUT11AF
POWER TRANSISTOR
5.0 AMPERES
450 VOLTS
40 WATTS
CASE 221D–02
TO–220 TYPE
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Sustaining Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Voltage
RMS Isolation Voltage (For 1 sec,
TA = 25°C, Rel. Humidity < 30%)
Collector Current — Continuous
Collector Current — Pulsed (1)
Base Current — Continuous
Base Current — Pulsed (1)
Total Power Dissipation @ TC = 25°C*
Derated above 25°C
Per Figure 7
Per Figure 8
Per Figure 9
VCEO(sus)
VCES
VEBO
VISOL1
VISOL2
VISOL3
IC
ICM
IB
IBM
PD
450
1000
9.0
4500
3500
2500
5.0
10
2.0
4.0
40
0.32
Vdc
Vdc
Vdc
V
Adc
Adc
Watts
W/°C
Operating and Storage Temperature Range
TJ, Tstg
– 65 to +150
°C
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case*
RθJC
3.125
°C/W
Maximum Lead Temperature for soldering purposes
1/8from case for 5 sec.
TL 260 °C
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle 10%.
*Measurement made with thermocouple contacting the bottom insulated mounting surface of the package (in a location beneath the die),
the device mounted on a heatsink, thermal grease applied, and a mounting torque of 6 to 8 in . lbs.
© Semiconductor Components Industries, LLC, 2001
March, 2001 – Rev. 4
1
Publication Order Number:
BUT11AF/D

1 page




BUT11AF pdf
BUT11AF
PACKAGE DIMENSIONS
TO–220 FULLPAK
CASE 221D–02
ISSUE D
–B–
F
Q
A
123
H
K
–Y–
–T–
SEATING
PLANE
C
S
U
G
N
L
D 3 PL
0.25 (0.010) M B M Y
J
R
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
INCHES
DIM MIN MAX
A 0.621 0.629
B 0.394 0.402
C 0.181 0.189
D 0.026 0.034
F 0.121 0.129
G 0.100 BSC
H 0.123 0.129
J 0.018 0.025
K 0.500 0.562
L 0.045 0.060
N 0.200 BSC
Q 0.126 0.134
R 0.107 0.111
S 0.096 0.104
U 0.259 0.267
MILLIMETERS
MIN MAX
15.78 15.97
10.01 10.21
4.60 4.80
0.67 0.86
3.08 3.27
2.54 BSC
3.13 3.27
0.46 0.64
12.70 14.27
1.14 1.52
5.08 BSC
3.21 3.40
2.72 2.81
2.44 2.64
6.58 6.78
http://onsemi.com
5

5 Page










PáginasTotal 8 Páginas
PDF Descargar[ Datasheet BUT11AF.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
BUT11AHIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORSTMicroelectronics
STMicroelectronics
BUT11ASilicon diffused power transistorsNXP Semiconductors
NXP Semiconductors
BUT11AHigh Voltage Power Switching ApplicationsFairchild Semiconductor
Fairchild Semiconductor
BUT11ASILICON POWER TRANSISTORSavantIC
SavantIC

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


www.DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar