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PDF UPA2719AGR Data sheet ( Hoja de datos )

Número de pieza UPA2719AGR
Descripción P-CHANNEL POWER MOS FET
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
μ PA2719AGR
SWITCHING
P-CHANNEL POWER MOS FET
DESCRIPTION
The μ PA2719AGR is P-Channel MOS Field Effect
Transistor designed for power management applications of
notebook computers and Lithium-Ion battery protection
circuit.
PACKAGE DRAWING (Unit: mm)
85
1, 2, 3 : Source
4 : Gate
5, 6, 7, 8 : Drain
FEATURES
Low on-state resistance
RDS(on)1 = 13 mΩ MAX. (VGS = 10 V, ID = 5.0 A)
RDS(on)2 = 20.9 mΩ MAX. (VGS = 4.5 V, ID = 5.0 A)
Low input capacitance
Ciss = 2010 pF TYP.
Built-in gate protection diode
Small and surface mount package (Power SOP8)
14
5.37 MAX.
6.0 ±0.3
4.4
1.27 0.78 MAX.
0.40
+0.10
–0.05
0.12 M
0.5 ±0.2
0.8
0.10
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.)
Drain to Source Voltage (VGS = 0 V)
VDSS
30
V
Gate to Source Voltage (VDS = 0 V)
VGSS
m20
V
Drain Current (DC)
Drain Current (pulse) Note1
Total Power Dissipation Note2
Total Power Dissipation Note3
ID(DC)
ID(pulse)
PT1
PT2
m10
m100
2
2
A
A
W
W
Channel Temperature
Tch 150 °C
Storage Temperature
Single Avalanche Current Note4
Single Avalanche Energy Note4
Tstg 55 to +150 °C
IAS 10 A
EAS 10 mJ
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Notes 1. PW 10 μs, Duty Cycle 1%
2. Mounted on ceramic substrate of 1200 mm2 x 2.2 mm
3. Mounted on glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mm, PW = 10 sec
4. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, L = 100 μH, VGS = 20 0 V
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G19281EJ1V0DS00 (1st edition)
Date Published May 2008 NS
Printed in Japan
2008

1 page




UPA2719AGR pdf
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
30
VGS = 10 V
20
4.5 V
4 V
10
0
-50
ID = 5 A
Pulsed
0 50 100
Tch - Channel Temperature - °C
150
10000
1000
SWITCHING CHARACTERISTICS
VDD = 15 V
VGS = 10 V
RG = 10 Ω
td(off)
100 tf
tr
10 td(on)
1
-0.1
-1 -10
ID - Drain Current - A
-100
1000
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
Pulsed
100
10 VGS = 10 V
0V
1
0.1
0.01
0
0.2 0.4 0.6 0.8 1 1.2
VF(S-D) - Source to Drain Voltage - V
1.4
μ PA2719AGR
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
1000
100
VGS = 0 V
f = 1 MHz
Ciss
Coss
Crss
10
-0.1
-1 -10
VDS - Drain to Source Voltage - V
-100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
-30 -15
ID = 10 A
VDD = 24 V
-20 15 V
6 V
-10
-10
0
0
VGS
VDS
20 40
QG - Gate Charge - nC
-5
0
60
1000
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
VGS = 0 V
di/dt = 50 A/μs
100
10
0.1
1 10
IF - Diode Forward Current - A
100
Data Sheet G19281EJ1V0DS
5

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