DataSheet.es    


PDF FDS5692Z Data sheet ( Hoja de datos )

Número de pieza FDS5692Z
Descripción N-Channel UltraFET Trench MOSFET
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



Hay una vista previa y un enlace de descarga de FDS5692Z (archivo pdf) en la parte inferior de esta página.


Total 6 Páginas

No Preview Available ! FDS5692Z Hoja de datos, Descripción, Manual

February 2006
FDS5692Z
N-Channel UltraFET Trench® MOSFET
50V, 5.8A, 24mΩ
General Description
Features
This N-Channel UltraFET device has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low rDS(on) and fast switching speed.
„ Max rDS(on) = 24mΩ at VGS = 10V, ID = 5.8A
„ Max rDS(on) = 33mΩ at VGS = 4.5V, ID = 5.6A
„ ESD protection diode (note 3)
Applications
„ Low Qgd
„ DC/DC converter
„ Fast switching speed
D
D
D
D
SO-8
G
SS
S
5
6
7
8
MOSFET Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDS
VGS
ID
Drain-Source Voltage
Parameter
Gate-Source Voltage
Drain Current – Continuous
(Note 1a)
– Pulsed
EAS Single Pulse Avalanche Energy
PD UltraFET Dissipation for Single Operation (Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1c)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
FDS5692Z
FDS5692Z
SO-8
13”
©2006 Fairchild Semiconductor Corporation
FDS5692Z Rev C(W)
4
3
2
1
Ratings
50
± 20
5.8
40
72
2.5
1.2
1.1
–55 to 150
50
125
25
Units
V
V
A
mJ
W
°C
°C/W
Tape width
12mm
Quantity
2500units
www.fairchildsemi.com

1 page




FDS5692Z pdf
Typical Characteristics
10
ID = 5.8A
8
6
4
VDS = 20V
30V
25V
2
0
0 4 8 12 16 20
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
RDS(ON) LIMIT
10
1
100µs
1ms
10ms
100ms
1s
10s
DC
VGS = 10V
0.1 SINGLE PULSE
RθJA = 125oC/W
TA = 25oC
0.01
0.01
0.1 1 10
VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area.
1500
1200
f = 1MHz
VGS = 0 V
900
Ciss
600
Coss
300
Crss
0
0 5 10 15 20 25
VDS, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 8. Capacitance Characteristics.
40
SINGLE PULSE
RθJA = 125°C/W
30 TA = 25°C
20
10
0
0.001
0.01
0.1 1
t1, TIME (sec)
10
Figure 10. Single Pulse Maximum
UltraFET Dissipation.
100
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.001
0.0001
SINGLE PULSE
0.001
0.01
0.1 1
t1, TIME (sec)
RθJA(t) = r(t) * RθJA
RθJA = 125 °C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
10 100 1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS5692Z Rev C(W)
www.fairchildsemi.com

5 Page










PáginasTotal 6 Páginas
PDF Descargar[ Datasheet FDS5692Z.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
FDS5692ZN-Channel UltraFET Trench MOSFETFairchild Semiconductor
Fairchild Semiconductor

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar