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Número de pieza | IRF7832 | |
Descripción | N-Channel 30-V (D-S) MOSFET | |
Fabricantes | Freescale | |
Logotipo | ||
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N-Channel 30-V (D-S) MOSFET
Key Features:
• Low rDS(on) trench technology
• Low thermal impedance
• Fast switching speed
Typical Applications:
• White LED boost converters
• Automotive Systems
• Industrial DC/DC Conversion Circuits
IRF7832/ MC7832
VDS (V)
30
PRODUCT SUMMARY
rDS(on) (mΩ)
6 @ VGS = 10V
8 @ VGS = 4.5V
ID(A)
19
16
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current a
Pulsed Drain Current b
Continuous Source Current (Diode Conduction) a
TA=25°C
TA=70°C
ID
IDM
IS
19
16
60
4.5
Power Dissipation a
TA=25°C
TA=70°C
PD
3.1
2.2
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 150
Units
V
A
A
W
°C
Maximum Junction-to-Ambient a
THERMAL RESISTANCE RATINGS
Parameter
t <= 10 sec
Steady State
Symbol Maximum
RθJA
40
80
Units
°C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
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1 page Freescale
Package Information
IRF7832/ MC7832
Note:
1. All Dimension Are In mm.
2. Package Body Sizes Exclude Mold Flash, Protrusion Or Gate Burrs. Mold Flash, Protrusion Or Gate Burrs Shall
Not Exceed 0.10 mm Per Side.
3. Package Body Sizes Determined At The Outermost Extremes Of The Plastic Body Exclusive Of Mold Flash, Tie
Bar Burrs, Gate Burrs And Interlead Flash, But Including Any Mismatch Between The Top And Bottom Of The
Plastic Body.
4. The Package Top May Be Smaller Than The Package Bottom.
5. Dimension "B" Does Not Include Dambar Protrusion. Allowable Dambar Protrusion Shall Be 0.08 mm Total In
Excess Of "B" Dimension At Maximum Material Condition. The Dambar Cannot Be Located On The Lower Radius
Of The Foot.
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5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet IRF7832.PDF ] |
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