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Número de pieza | SSF6808 | |
Descripción | 68V N-Channel MOSFET | |
Fabricantes | GOOD-ARK | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de SSF6808 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! SSF6808
68V N-Channel MOSFET
FEATURES
Advanced trench process technology
Ultra low Rdson, typical 6mohm
High avalanche energy, 100% test
Fully characterized avalanche voltage and current
Lead free product
ID =84A
BV=68V
R DS (ON) =8mohm
DESCRIPTION
The SSF6808 is a new generation of middle voltage and high
current N–Channel enhancement mode trench power
MOSFET. This new technology increases the device
reliability and electrical parameter repeatability. SSF6808 is
assembled in high reliability and qualified assembly house.
APPLICATIONS
Power switching application
SSF6808 Top View (TO-220)
Absolute Maximum Ratings
Parameter
I DB
@T
B
B
c
=25ْ
B
C
Continuous drain current,VGS@10V
I
B
D
@T cB B
=100Cْ
B
Continuous drain current,VGS@10V
IDMB B Pulsed drain current ①
Power dissipation
P
B
D
@T CB B
=25ْC
B
Linear derating factor
V GSB B
dv/dt
Gate-to-Source voltage
Peak diode recovery voltage
E ASB B
E ARB B
T JB B
T STGB B
Single pulse avalanche energy ②
Repetitive avalanche energy
Operating Junction and
Storage Temperature Range
Max.
84
76
310
181
1.5
±20
31
400
TBD
–55 to +175
Units
A
W
W/ْ C
V
v/ns
mJ
ْC
Thermal Resistance
Parameter
R θJCB B
R θJAB B
Junction-to-case
Junction-to-ambient
Min.
—
—
Typ.
0.83
—
Max.
—
62
Units
ْC/W
Electrical Characteristics @TJ=25 ْC (unless otherwise specified)
Parameter
Min. Typ.
BV DSSB B
RBDS(on)B
VBGS(th)B
Drain-to-Source breakdown voltage
Static Drain-to-Source on-resistance
Gate threshold voltage
68 —
—5
2.0 —
——
IDSSB B Drain-to-Source leakage current
——
Max. Units
—V
8 mΩ
4.0 V
2
μA
10
Gate-to-Source forward leakage
I GSSB B
Gate-to-Source reverse leakage
— — 100
nA
— — -100
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Page 1 of 5
Test Conditions
VGSB B=0V,IBDB=250μA
V
B
GSB=10V,I
B
DB=30A
V
B
D
SB=V
,IGSB B
DB
=250μA
B
VDB SB=68V,VBGSB=0V
VDB SB=68V,
VBGSB=0V,TBJB=150ْC
VGSB B=20V
V
B
GSB=-20V
Rev.2.4
1 page Mechanical Data
TO-220 PACKAGE OUTLINE DIMENSION_GN
E
SSF6808
68V N-Channel MOSFET
A
D
D1
b
ФP
ФP1
b1
ϴ1
ϴ2
L
D2
ϴ
A1 ϴ4
Symbol
A
A1
b
b1
c
D
D1
D2
E
E1
ФP
ФP1
e
L
ϴ1
ϴ2
ϴ3
ϴ4
e
Dimension In Millimeters
Min Nom Max
- 1.300
-
2.200
2.400
2.600
- 1.270
-
1.270
1.370
1.470
- 0.500
-
- 15.600
-
- 28.700
-
- 9.150
-
9.900
10.000
10.100
- 10.160
-
- 3.600
-
1.500
2.54BSC
12.900
13.100
13.300
- 70 -
- 70 -
- 30 -
- 30 -
cE
Dimension In Inches
Min Nom Max
- 0.051
-
0.087
0.094
0.102
- 0.050
-
0.050
0.054
0.058
- 0.020
-
- 0.614
-
- 1.130
-
- 0.360
-
0.390
0.394
0.398
- 0.400
-
- 0.142
-
0.059
0.1BSC
0.508
0.516
0.524
- 70 -
- 70 -
50 70 90
10 30 50
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Page 5 of 5
Rev.2.4
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet SSF6808.PDF ] |
Número de pieza | Descripción | Fabricantes |
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