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PDF SSF6014D Data sheet ( Hoja de datos )
| Número de pieza | SSF6014D | |
| Descripción | 60V N-Channel MOSFET | |
| Fabricantes | GOOD-ARK | |
| Logotipo |  |
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Main Product Characteristics
VDSS
RDS(on)
ID
60V
12mΩ(typ.)
60A
DPAK
Features and Benefits
Advanced trench MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
175℃ operating temperature
Lead free product
SSF6014D
60V N-Channel MOSFET
Marking and Pin
Assignment
Schematic Diagram
Description
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely
efficient and reliable device for use in power switching application and a wide variety of other applications.
Absolute Max Rating
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
EAS
IAS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V①
Continuous Drain Current, VGS @ 10V①
Pulsed Drain Current②
Power Dissipation③
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=0.3mH
Avalanche Current @ L=0.3mH
Operating Junction and Storage Temperature Range
Max.
60
42
240
115
0.74
60
± 20
235
39
-55 to + 175
Units
A
W
W/°C
V
V
mJ
A
°C
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Page 1 of 7
Rev.2.2
1 page  
SSF6014D
60V N-Channel MOSFET
Figure 5,Gate Charge
Figure 6,Source-Drain Diode Forward Voltage
Figure 7. Safe Operation Area
Figure 8. Max Drain Current vs. Junction
Temperature
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Figure 9. Transient Thermal Impedance Curve
Page 5 of 7
Rev.2.2
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SSF6014D.PDF ] | |
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