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PDF SSF5508 Data sheet ( Hoja de datos )
| Número de pieza | SSF5508 | |
| Descripción | 55V N-Channel MOSFET | |
| Fabricantes | GOOD-ARK | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de SSF5508 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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Main Product Characteristics
VDSS
55V
RDS(on) 4.5mohm(typ.)
ID 110A
Features and Benefits
TO-220
Advanced trench MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
175℃ operating temperature
Lead free product
SSF5508
55V N-Channel MOSFET
Marking and Pin
Assignment
Schematic Diagram
Description
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely
efficient and reliable device for use in power switching application and a wide variety of other applications.
Absolute Max Rating
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
EAS
IAR
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V①
Continuous Drain Current, VGS @ 10V①
Pulsed Drain Current②
Power Dissipation③
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=0.3mH②
Avalanche Current @ L=0.3mH②
Operating Junction and Storage Temperature Range
Max.
110
80
440
205
2.0
55
± 20
375
50
-55 to +175
Units
A
W
W/°C
V
V
mJ
A
°C
www.goodark.com
Page 1 of 7
Rev.4.2
1 page  
SSF5508
55V N-Channel MOSFET
Figure 5. Maximum Drain Current Vs. Case
Temperature
Figure 6.Typical Capacitance Vs. Drain-to-Source
Voltage
Figure7. Maximum Effective Transient Thermal Impedance, Junction-to-Case
TO-220 Mechanical Data
www.goodark.com
Page 5 of 7
Rev.4.2
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SSF5508.PDF ] | |
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