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PDF NVMFS5833N Data sheet ( Hoja de datos )

Número de pieza NVMFS5833N
Descripción Power MOSFET ( Transistor )
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NVMFS5833N
Power MOSFET
40 V, 7.5 mW, 86 A, Single N−Channel,
SO−8FL
Features
Low RDS(on)
Low Capacitance
Optimized Gate Charge
AEC−Q101 Qualified and PPAP Capable
NVMFS5833NWF − Wettable Franks Option for Enhanced Optical
Inspection
These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Cur-
rent RYJ−mb
(Notes 1, 2, 3 & 4)
Power Dissipation
RYJ−mb (Notes 1, 2, 3)
Steady
State
Tmb = 25°C
Tmb = 100°C
Tmb = 25°C
Tmb = 100°C
Continuous Drain Cur-
rent RqJA
(Notes 1, 3 & 4)
Power Dissipation
RqJA (Notes 1 & 3)
Steady
State
TA = 25°C
TA = 100°C
TA = 25°C
TA = 100°C
Pulsed Drain Current TA = 25°C, tp = 10 ms
Operating Junction and Storage Temperature
VDSS
VGS
ID
PD
ID
PD
IDM
TJ, Tstg
40
"20
86
61
112
56
16
11
3.7
1.8
324
−55 to
175
V
V
A
W
A
W
A
°C
Source Current (Body Diode)
IS 86 A
Single Pulse Drain−to−Source Avalanche
EAS 65 mJ
Energy (TJ = 25°C, IL(pk) = 36 A, L = 0.1 mH)
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
TL 260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
Junction−to−Mounting Board (top) − Steady
State (Notes 2, 3)
RYJ−mb
1.3 °C/W
Junction−to−Ambient − Steady State (Note 3) RqJA
41
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Psi (Y) is used as required per JESD51−12 for packages in which
substantially less than 100% of the heat flows to single case surface.
3. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
4. Continuous DC current rating. Maximum current for pulses as long as
1 second are higher but are dependent on pulse duration and duty cycle/
http://onsemi.com
V(BR)DSS
40 V
RDS(ON) MAX
7.5 mW @ 10 V
ID MAX
86 A
D (5)
G (4)
S (1,2,3)
N−CHANNEL MOSFET
1
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
MARKING DIAGRAM
D
SD
S 5833xx
S AYWZZ
GD
D
5833
xx
A
Y
W
ZZ
= Specific Device Code
= N (NVMFS5833N) or
= WF (NVMFS5833NWF)
= Assembly Location
= Year
= Work Week
= Lot Traceability
ORDERING INFORMATION
Device
NVMFS5833NT1G
Package
SO−8FL
(Pb−Free)
Shipping
1500 /
Tape & Reel
NVMFS5833NT3G
SO−8FL
5000 /
(Pb−Free) Tape & Reel
NVMFS5833NWFT1G SO−8FL
1500 /
(Pb−Free) Tape & Reel
NVMFS5833NWFT3G SO−8FL
5000 /
(Pb−Free) Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
September, 2014 − Rev. 1
1
Publication Order Number:
NVMFS5833N/D

1 page




NVMFS5833N pdf
100
Duty Cycle = 0.5
10 0.2
0.1
0.05
1 0.02
0.01
0.1
Single Pulse
0.01
0.000001 0.00001
0.0001
NVMFS5833N
TYPICAL CHARACTERISTICS
0.001
0.01 0.1
PULSE TIME (sec)
Figure 13. Thermal Response
1
10 100 1000
http://onsemi.com
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