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PDF ECH8661 Data sheet ( Hoja de datos )

Número de pieza ECH8661
Descripción Power MOSFET ( Transistor )
Fabricantes ON Semiconductor 
Logotipo ON Semiconductor Logotipo



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No Preview Available ! ECH8661 Hoja de datos, Descripción, Manual

Ordering number : ENA1777A
ECH8661
Power MOSFET
30V, 7A, 24mΩ, –30V, –5.5A, 39mΩ, Complementary Dual ECH8
http://onsemi.com
Features
ON-resistance Nch: RDS(on)1=18mΩ(typ.), Pch: ON-resistance RDS(on)1=30mΩ(typ.)
The ECH8661 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and
high-speed switching , thereby enablimg high-density mounting
4V drive
Halogen free compliance
Protection diode in
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
PT
Tch
Tstg
Conditions
PW10μs, duty cycle1%
When mounted on ceramic substrate (900mm2×0.8mm) 1unit
When mounted on ceramic substrate (900mm2×0.8mm)
N-channel P-channel
30 --30
±20 ±20
7 --5.5
40 --40
1.3
1.5
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7011A-001
Top View
2.9
85
ECH8661-TL-H
0.15
0 to 0.02
Product & Package Information
• Package
: ECH8
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
TG
TL LOT No.
1
0.65
4
0.3
Bottom View
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
ECH8
Electrical Connection
87 6 5
1234
Semiconductor Components Industries, LLC, 2013
July, 2013
51612 TKIM/72110PE TKIM TC-00002431 No. A1777-1/9

1 page




ECH8661 pdf
ECH8661
RDS(on) -- VGS
[Pch]
200
Ta=25°C
180
160 ID= --1.5A
140 --2.5A
120
100
80
60
40
20
0
0 --2 --4 --6 --8 --10 --12 --14 --16
2
Gate-to-Source
| yfs
V| ol-t-ageID, VGS
--
V
IT15727
[Pch]
VDS= --10V
10
7
5
3
2
1.0
7
Ta= --25°C
75°C
25°C
5
3
2
0.1
7
--0.01
23
100
7
5
5 7 --0.1 2 3 5 7 --1.0
Drain
SW
Current,
Time
I-D-
-- A
ID
td(off)
tf
2 3 57
IT14859
[Pch]
3
2
tr
10
7 td(on)
5
3
--0.1
23
--10
VDS= --10V
--9 ID= --5.5A
--8
VDD= --15V
VGS= --10V
5 7 --1.0
23
5 7 --10
2
Drain Current,
VGS --
IQDg--
A
IT14861
[Pch]
--7
--6
--5
--4
--3
--2
--1
0
0 1 2 3 4 5 6 7 8 9 10 11 12 13
Total Gate Charge, Qg -- nC
IT15733
RDS(on) -- Ta
[Pch]
100
90
80
70
60
50
40
V GVSV=GGS--=4S.=-0-4V--.,51IV0D.,0=IVD--,=1I.D5--A1=.5--A2.5A
30
20
10
--60 --40 --20 0
20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C IT15728
2
IS -- VSD
[Pch]
--10 VGS=0V
7
5
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
--0.01
7
5
3
2
--0.001
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
2
Diode
Ciss,
Forward Voltage,
Coss, Crss
V-S-DV--DVS
IT14860
[Pch]
f=1MHz
1000
7
5
Ciss
3
2
Coss
100 Crss
7
5
0 --5 --10 --15 --20 --25 --30
Drain-to-Source
A
Voltage,
SO
VDS
--
V
--100
7
5
IDP= --40A (PW10μs)
IT14862
[Pch]
3
2
--10
7
5
3
2
--1.0
7
5
3
2
ID= --5.5A
1ms 100μs
10ms
Operation in this
area is limited by
RDDCSo(poenr)a.tio1n00(mTas=25°C)
--0.1
7
5
3
2
Ta=25°C
Single pulse
When mounted on ceramic substrate
--0.01 (900mm2×0.8mm) 1unit
--0.1 2 3 5 7 --1.0 2 3 5 7 --10
23
5
Drain-to-Source Voltage, VDS -- V IT15729
No. A1777-5/9

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