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PDF SSF7NS65G Data sheet ( Hoja de datos )
| Número de pieza | SSF7NS65G | |
| Descripción | 650V N-Channel MOSFET | |
| Fabricantes | GOOD-ARK | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de SSF7NS65G (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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Main Product Characteristics
VDSS
RDS(on)
ID
650V
0.58Ω (typ.)
7A ①
Features and Benefits
High dv/dt and avalanche capabilities
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Lead free product
TO-251
SSF7NS65G
650V N-Channel MOSFET
Marking and Pin
Assignment
Schematic Diagram
Description
The SSF7NS65G series MOSFET is a new technology, which combines an innovative super junction
technology and advance process. This new technology achieves low RDS(ON), energy saving, high
reliability and uniformity, superior power density and space saving.
Absolute Max Rating
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
EAS
IAR
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current ②
Power Dissipation ③
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=15.2mH
Avalanche Current @ L=15.2mH
Operating Junction and Storage Temperature Range
Max.
7①
5①
28
83
0.67
650
± 30
68
3
-55 to +150
Units
A
W
W/°C
V
V
mJ
A
°C
www.goodark.com
Page 1 of 7
Rev.1.2
1 page  
SSF7NS65G
650V N-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure 5. Maximum Drain Current Vs. Case
Temperature
Figure 6. Typical Capacitance Vs. Drain-to-Source
Voltage
Figure7. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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Page 5 of 7
Rev.1.2
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SSF7NS65G.PDF ] | |
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