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Número de pieza | SSF7N60F | |
Descripción | 600V N-Channel MOSFET | |
Fabricantes | GOOD-ARK | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de SSF7N60F (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! Main Product Characteristics
VDSS
600V
RDS(on) 0.9ohm(typ.)
ID 7A
TO-220F
Features and Benefits
Advanced trench MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
150℃ operating temperature
Lead free product
SSF7N60F
600V N-Channel MOSFET
Marking and Pin
Assignment
Schematic Diagram
Description
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely
efficient and reliable device for use in power switching application and a wide variety of other applications.
Absolute Max Rating
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
EAS
IAS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V①
Continuous Drain Current, VGS @ 10V①
Pulsed Drain Current②
Power Dissipation③
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=15.7mH
Avalanche Current @ L=15.7mH
Operating Junction and Storage Temperature Range
Max.
7
4.4
28
48
0.38
600
± 30
607.9
8.8
-55 to + 150
Units
A
W
W/°C
V
V
mJ
A
°C
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Page 1 of 7
Rev.1.0
1 page Typical Electrical and Thermal Characteristics
SSF7N60F
600V N-Channel MOSFET
Figure 5. Maximum Drain Current Vs. Case
Temperature
Figure 6.Typical Capacitance Vs. Drain-to-Source
Voltage
Figure7. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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Page 5 of 7
Rev.1.0
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet SSF7N60F.PDF ] |
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