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PDF SSF2N60D2 Data sheet ( Hoja de datos )

Número de pieza SSF2N60D2
Descripción 600V N-Channel MOSFET
Fabricantes GOOD-ARK 
Logotipo GOOD-ARK Logotipo



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No Preview Available ! SSF2N60D2 Hoja de datos, Descripción, Manual

Main Product Characteristics
VDSS
RDS(on)
ID
600V
3.7Ω (typ.)
2A
TO-252
Features and Benefits
Advanced MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
150operating temperature
Lead free product
SSF2N60D2
600V N-Channel MOSFET
Preliminary
Marking and Pin
Assignment
Schematic Diagram
Description
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in power switching application and a wide variety of other applications.
Absolute Max Rating
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
EAS
IAS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=30mH
Avalanche Current @ L=30mH
Operating Junction and Storage Temperature Range
Max.
2
1.3
8
34
0.27
600
± 30
115
2.52
-55 to +150
Units
A
W
W/°C
V
V
mJ
A
°C
www.goodark.com
Page 1 of 7
Rev.1.0

1 page




SSF2N60D2 pdf
SSF2N60D2
600V N-Channel MOSFET
Preliminary
Typical Electrical and Thermal Characteristics
Figure 5. Maximum Drain Current Vs. Case
Temperature
Figure 6.Typical Capacitance Vs. Drain-to-Source
Voltage
www.goodark.com
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