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Número de pieza | NTTFS4965NF | |
Descripción | Power MOSFET ( Transistor ) | |
Fabricantes | ON Semiconductor | |
Logotipo | ||
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No Preview Available ! NTTFS4965NF
Power MOSFET
30 V, 64 A, Single N−Channel, WDFN8
Features
• Integrated Schottky Diode
• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• These Devices are Pb−Free and are RoHS Compliant
Applications
• CPU Power Delivery
• Synchronous Rectification for DC−DC Converters
• Low Side Switching
• Telecom Secondary Side Rectification
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
http://onsemi.com
V(BR)DSS
30 V
RDS(on) MAX
3.5 mW @ 10 V
5.2 mW @ 4.5 V
ID MAX
64 A
N−Channel MOSFET
D
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current RqJA (Note 1)
Power Dissipation
(Note 1)
RqJA
TA = 25°C
TA = 85°C
TA = 25°C
Continuous Drain
C(Nuortreen1t)RqJA ≤ 10 s
TA = 25°C
TA = 85°C
Power Dissipation
RqJA ≤ 10 s (Note 1)
Continuous Drain
Current RqJA (Note 2)
Steady
State
TA = 25°C
TA = 25°C
TA = 85°C
Power Dissipation
RqJA (Note 2)
TA = 25°C
Continuous Drain
Current RqJC (Note 1)
TC = 25°C
TC = 85°C
Power Dissipation
RqJC (Note 1)
TC = 25°C
Pulsed Drain Current
TA = 25°C, tp = 10 ms
Operating Junction and Storage Temperature
VDSS
VGS
ID
PD
ID
PD
ID
PD
ID
PD
IDM
TJ,
Tstg
30 V
±20 V
22 A
15.9
2.69 W
32.4 A
23.4
5.85 W
16.3 A
11.7
1.47 W
64
46
22.73
A
W
192
−55 to
+150
A
°C
G
1
WDFN8
(m8FL)
CASE 511AB
S
MARKING DIAGRAM
1
SD
S 4965 D
S AYWWG D
GGD
4965
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package Shipping†
NTTFS4965NFTAG WDFN8 1500 / Tape &
(Pb−Free)
Reel
Source Current (Body Diode)
Drain to Source dV/dt
IS
dV/dt
32 A
6.0 V/ns
NTTFS4965NFTWG WDFN8 5000 / Tape &
(Pb−Free)
Reel
Single Pulse Drain−to−Source Avalanche Energy
(TJ = 25°C, VDD = 50 V, VGS = 10 V,
IL = 32 Apk, L = 0.1 mH, RG = 25 W)
EAS
52 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL 260 °C
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 2 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size of 90 mm2.
© Semiconductor Components Industries, LLC, 2013
October, 2013 − Rev. 0
1
Publication Order Number:
NTTFS4965NF/D
1 page NTTFS4965NF
TYPICAL PERFORMANCE CURVES
2800
2600
2400
2200
2000
1800
1600
1400
1200
1000
800
600
400
200
0
0
VGS = 0 V
TJ = 25°C
Ciss
Crss
Coss
5 10 15 20 25
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
30
1000
100
VDD = 15 V
ID = 10 A
VGS = 10 V
td(off)
tf
tr
10 td(on)
1
1 10 100
RG, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
1000
100
VGS = 20 V
Single Pulse
TC = 25°C
10
1
10 ms
100 ms
1 ms
10 ms
0.1
0.01
0.1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1 10
dc
100
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
10 QT
8
6
4 Qgs
Qgd
ID = 30 A
2
TJ = 25°C
VDD = 15 V
VGS = 10 V
0
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30
QG, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
10
9 VGS = 0 V
8 TJ = 25°C
7
6
5
4
3
2
1
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage vs. Current
55
50 ID = 32 A
45
40
35
30
25
20
15
10
5
0
25 50 75 100 125 150
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
http://onsemi.com
5
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