|
|
PDF NOP04811 Data sheet ( Hoja de datos )
| Número de pieza | NOP04811 | |
| Descripción | 400/300/200/100 DPI High-Speed Photodiode Array | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de NOP04811 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
|
No Preview Available !
NOP04811
400/300/200/100 DPI
High-Speed Photodiode
Array
Description
The NOP04811 photodiode array (PDA) provides selectable 400,
300, 200 and 100 dot per inch (dpi) resolution. The sensor contains an
on−chip output amplifier, internal power−down capability and parallel
transfer features that are uniquely combined with advanced
active−pixel−sensor technology. Applications for the photodiode
sensor array include currency verification, bar code scanning and
industrial process automation equipment.
Features
• 400, 300, 200 and 100 dpi Selectable Resolutions
• 232, 174, 116 or 58 Image Sensor Elements (pixels)
• 63.45 mm (400 dpi) Pixel Center−to−Center Spacing
• On−chip Amplifier
• Single 3.3 V Power Supply
• 3.3 V Input Clocks and Control Signals
• 8.0 MHz Maximum Pixel Rate
• Parallel Integration and Transfer Operations
• Automatic Power−down of Internal Circuitry
• High Sensitivity
• Low Power
• Low Noise
• This is a Pb−Free Device
Applications
• Currency Verification
• Document Scanning
• Barcode Scanning
• Process Automation Equipment
http://onsemi.com
OLCC12
CL SUFFIX
CASE 755AA
MARKING DIAGRAM
XXXXXXXX AYW
(Bottom View of Package)
XXXXXXXX = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 9 of this data sheet.
Micro
Controller
GPIO
100 W
100 W
100 W
100 W
RS1
RS2
GBST
CLK
SI
NOP04811
Photodiode Array Storage, Transfer and Readout Registers
VDD
0.1 mF
+
10 mF
Amp
V OUT
VREF
SO
VSS
50 kW
100 W
0.1 mF
Figure 1. Typical Application Circuit
© Semiconductor Components Industries, LLC, 2012
March, 2012 − Rev. 1
1
Publication Order Number:
NOP04811/D
1 page  
NOP04811
Table 7. ELECTRO−OPTICAL CHARACTERISTICS
(Unless otherwise specified, these specifications were achieved with the test conditions defined in Table 6)
Parameter
Symbol
Min
Typ Max
Unit
Dark output voltage (Note 14)
Dark output non−uniformity (Note 15)
Photo−response non−uniformity (Note 16)
Adjacent pixel photo−response non−uniformity (Note 17)
Saturation voltage (Note 18)
Sensitivity, 400 dpi (Note 19)
Sensitivity, 300 dpi (Note 19)
Sensitivity, 200 dpi (Note 19)
Sensitivity, 100 dpi (Note 19)
Photo−response linearity (Note 20)
Vd
Ud
Up
Upadj
VSat
SV_400
SV_300
SV_200
SV_100
PRL
VREF − 0.150
0
−15
0
99
VREF
1.2
2135
TBD
TBD
TBD
VREF + 0.150
100
15
15
107
V
mV
%
%
V
V/mJ/cm2
V/mJ/cm2
V/mJ/cm2
V/mJ/cm2
%
Individual rms pixel noise, 400 dpi (Note 21)
Image lag (chip average) (Note 22)
P_noise
IL
0
3 15 mV
1%
14. Vd is the average dark output level and represents the offset level of the video output in the dark. The dark level is set by VREF and is
recommended to be 1.2 V for optimal module operation.
15. Ud = Vdmax – Vdmin, where
Vdmax is the maximum pixel output voltage in the dark
Vdmin is the minimum pixel output voltage in the dark
In the 400 dpi mode, dark output non−uniformity is tested at 4 ms.
16. Up = [(Vpmax – Vpavg)/Vpavg] x 100%, or [Vpavg – Vpmin)/Vpavg] x 100%, whichever is greater, where
Vpmax is the maximum pixel voltage of any pixel at full bright
Vpmin is the minimum pixel voltage of any pixel at full bright
Vpavg is average output voltage of all pixels at full bright.
17. Upadj = MAX [ | (Vp(n) − Vp(n+1) | / Vpavg] x 100%, where
Upadj is the nonuniformity in percent between adjacent pixels for a bright background
Vp(n) is the pixel output voltage of pixel n at full bright.
18. VSat is defined as the maximum video output voltage swing measured from the dark level to the saturation level. It is measured by using
the module LED light source with the module imaging a uniform white target. The LED light level is increased until the output voltage no longer
increases with an increase in the LED brightness.
19. Sv is defined as the slope of the Vpavg vs. Exposure curve. Sensitivity uniformity is nominally better than ±10% die−to−die.
20. PRL = ((Vratio − Tratio) / Tratio) x 100%, where
Vratio = (Vavg3 − Vavg1) / (Vavg2 − Vavg1)
Tratio = (Tint3 − Tint1) / (Tint2 − Tint1)
Tint1 is the integration time needed to get a Vavg1 of about 0.1 V
Tint2 is the integration time needed to get a Vavg2 of about 0.5 V
Tint3 is the integration time needed to get a Vavg3 of about 0.9 V
A specification limit of 5% for this test method is a tighter spec than ±5% deviation from a best fit line. Linearity is specified within the range
of the saturation voltage.
21. Individual rms pixel noise is defined as the standard deviation of each pixel in the dark. This can also be considered output referred noise
as it is measured at the sensor output.
22. Image lag is defined as taking two subsequent CIS reads where the first readout occurs when the sensor is illuminated such that the imager
output voltage is in saturation and the second readout occurs with zero irradiance falling on the sensor.
http://onsemi.com
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet NOP04811.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| NOP04811 | 400/300/200/100 DPI High-Speed Photodiode Array | ON Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |