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PDF FW4604 Data sheet ( Hoja de datos )
| Número de pieza | FW4604 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
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Ordering number : ENA0273B
FW4604
Power MOSFET
30V, 6A, 39mΩ, –30V, –4.5A, 65mΩ, Complementary Dual SOIC8
http://onsemi.com
Features
• On-state resistance Nch : RDS(on)1=30mΩ(typ.)
Pch : RDS(on)1=50mΩ(typ.)
• 4.5V drive
• Halogen free compliance
• Nch + Pch MOSFET
• Protection diode in
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (PW≤10s)
Drain Current (PW≤10μs)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
VDSS
VGSS
ID
IDP
IDP
PD
PT
Tch
Storage Temperature
Tstg
Conditions
Duty cycle≤1%
Duty cycle≤1%
When mounted on ceramic substrate (2000mm2×0.8mm) 1unit, PW≤10s
When mounted on ceramic substrate (2000mm2×0.8mm), PW≤10s
N-channel P-channel
30 --30
±20 ±20
6 --4.5
6.5 --5
24 --18
1.8
2.2
150
--55 to +150
Unit
V
V
A
A
A
W
W
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7072-001
4.9
85
Product & Package Information
• Package
: SOIC8
• JEITA, JEDEC
: SC-87, SOT-96
• Minimum Packing Quantity : 2,500 pcs./reel
FW4604-TL-2W
0.22 Packing Type : TL
Marking
1
1.27
4
0.445 0.254 (GAGE PLANE)
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SOIC8
W4604
TL
LOT No.
Electrical Connection
8765
Semiconductor Components Industries, LLC, 2013
August, 2013
1234
80713 TKIM/61312 TKIM/12512PA TKIM TC-00002681 No. A0273-1/7
1 page  
FW4604
100
SW Time -- ID
[Pch]
1000 Ciss, Coss, Crss -- VDS [Pch]
7
5 td(off)
7 f=1MHz
5 Ciss
3 tf
3
22
10 t r td(on)
7
5
3
2
1.0
--0.1
23
--10
VDS= --15V
--9 ID= --4.5A
--8
VDD= --15V
VGS= --10V
5 7 --1.0
23
5 7 --10
Drain Current,
VGS --
IQDg--
A
IT16732
[Pch]
--7
--6
--5
--4
--3
--2
--1
0
0 2 4 6 8 10
Total Gate Charge, Qg -- nC
IT16734
2.4
PD -- Ta
[Nch/Pch]
When mounted on ceramic substrate
2.2 (2000mm2×0.8mm), PW≤10s
2.0
1.8
1.6
1.4
1.2
1.0 1unit
0.8
0.6
0.4
0.2
0
0 25 50 75 100 125 150 175
Ambient Temperature, Ta -- °C
IT16736
100 Coss
7
5 Crss
3
2
10
0
--5 --10 --15 --20 --25 --30
--100
7
5
Drain
to
Source
A
Voltage,
SO
VDS
--
V
IT16733
[Pch]
3
2
IDP= --18A (PW≤10μs)
--10
7
5
ID= --4.5A
3
2
100m10sm1sm1s00μs
--1.0
7
5
3
2
Operation in this
DC ope1r0astion
--0.1 area is limited by RDS(on).
7
5
3 Ta=25°C
2 Single pulse
--0.01 When mounted on ceramic substrate (2000mm2×0.8mm)
--0.01 2 3 5 7--0.1 2 3 5 7--1.0 2 3 5 7--10 2 3
5 7--100
2.4
Drain
PD
to Source
(FET1)
Voltage,
-- PD
V(FDEST-2- )V
IT16735
[Nch/Pch]
When mounted on ceramic substrate
2.2 (2000mm2×0.8mm), PW≤10s
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
Allowable Power Dissipation(FET2), PD -- W IT16737
No. A0273-5/7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet FW4604.PDF ] | |
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