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PDF FW389 Data sheet ( Hoja de datos )

Número de pieza FW389
Descripción Power MOSFET ( Transistor )
Fabricantes ON Semiconductor 
Logotipo ON Semiconductor Logotipo



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No Preview Available ! FW389 Hoja de datos, Descripción, Manual

Ordering number : ENA2066A
FW389
Power MOSFET
100V, 2A, 225m, –100V, –2A, 300m, Complementary Dual SOIC8
http://onsemi.com
Features
ON-resistance Nch : RDS(on)1=165mW(typ.)
Input Capacitance Nch : Ciss=490pF(typ.)
Pch : RDS(on)1=230mW(typ.)
Pch : Ciss=1000pF(typ.)
4V drive
Halogen free compliance
Protection diode in
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (PW100ms)
VDSS
VGSS
ID
IDP
Drain Current (PW10μs)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
IDP
PD
PT
Tch
Storage Temperature
Tstg
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
EAS
IAV
*1 N-Channel:VDD=10V, L=2mH, IAV=2A(Fig.1)
P-Channel:VDD=--10V, L=2mH, IAV=--2A(Fig.1)
*2 L≤2mH, single pulse
Conditions
Duty cycle1%
Duty cycle1%
When mounted on ceramic substrate (2000mm2×0.8mm) 1unit, (PW10s)
When mounted on ceramic substrate (2000mm2×0.8mm), (PW10s)
N-channel P-channel
100 --100
±20 ±20
2 --2
5 --5
8 --8
1.8
2.2
150
--55 to +150
5.3 5.3
2 --2
Unit
V
V
A
A
A
W
W
°C
°C
mJ
A
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
lectrical Characteristics at Ta=25°C
Parameter
Symbol
[N-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Conditions
ID=1mA, VGS=0V
VDS=100V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=2A
ID=2A, VGS=10V
ID=1A, VGS=4.5V
ID=1A, VGS=4V
VDS=10V, f=1MHz
See specified Test Circuit.
ORDERING INFORMATION
See detailed ordering and shipping information on page 7 of this data sheet.
Ratings
min typ max
Unit
100 V
1 mA
±10 mA
1.5 2.6 V
2.9 S
165 225 mW
180 254 mW
190 275 mW
490 pF
34 pF
13 pF
9.3 ns
5.4 ns
42 ns
26 ns
Continued on next page.
Semiconductor Components Industries, LLC, 2014
February, 2014
21314HK TC-00003093/61312TKIM PA No. A2066-1/8

1 page




FW389 pdf
FW389
500
RDS(on) -- VGS
[Pch]
Ta=25°C
450
400
--2A
350
300
250 ID= --1A
200
150
100
50
0
100
7
5
3
2
--2 --4 --6 --8 --10 --12 --14 --16 --18 --20
Gate-to-So|uyrcfesV|o-l-tagIeD, VGS -- V
IT16918
[Pch]
VDS= --10V
10
7
5
3
2
1.0
Ta=
--25°C
75°C
7
5
25°C
3
2
0.1
--0.01
1000
7
5
3
2
100
7
5
3
2
10
7
5
3
2
2 3 5 7 --0.1 2 3 5 7 --1.0
Drain Current, ID -- A
SW Time -- ID
td(off)
tf
td(on)
tr
2 3 5 7 --10
IT16920
[Pch]
VDD= --50V
VGS= --10V
1.0
--0.1
23
--10 VDS= --50V
--9 ID= --2A
5 7 --1.0
23
Drain Current, ID -- A
VGS -- Qg
5 7 --10
IT16922
[Pch]
--8
--7
--6
--5
--4
--3
--2
--1
0
0 5 10 15 20 25
Total Gate Charge, Qg -- nC
IT16924
RDS(on) -- Ta
[Pch]
500
450
400
350
300
250
200
V GS= --4.5V, I D= -V-V1G.G0SAS==----140.0.0VV, ,IIDD==---1-1.0.0AA
150
100
50
0
--60 --40 --20 0
20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT16919
--10
IS -- VSD
[Pch]
7
5
VGS=0V
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
--0.01
7
5
3
2
--0.001
0
10000
7
5
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
Diode Forward Voltage, VSD -- V IT16921
Ciss, Coss, Crss -- VDS [Pch]
f=1MHz
3
2
1000
7
5
Ciss
3
2
100 Coss
7 Crss
5
3
2
10
0
--5 --10 --15 --20 --25 --30
Drain-to-Source Voltage, VDS -- V
SOA
--100
57
3
2
--10
57
3
2
--1.07
5
3
2
--0.157
3
2
IDP= --8A(PW10μs)
ID= --2A
DC operation(P1W00m10ss)
Operation in this
area is limited by RDS(on).
100μs
IT13923
[Pch]
--0.0157
Ta=25°C
Single pulse
3
2
--0.001
When mounted on ceramic
(2000mm2×0.8mm) 1unit
substrate
--0.1 2 3 5 7--1.0 2 3 5 7--10 2 3 5 7--100 2 3 5 7--100
Drain-to-Source Voltage, VDS -- V IT16925
No. A2066-5/8

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