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PDF B80PF55 Data sheet ( Hoja de datos )
| Número de pieza | B80PF55 | |
| Descripción | STB80PF55 | |
| Fabricantes | STMicroelectronics | |
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STB80PF55
STP80PF55
P-channel 55 V, 0.016 Ω, 80 A TO-220, D2PAK
STripFETTM II Power MOSFET
Features
Type
STP80PF55
STB80PF55
VDSS
55V
55V
RDS(on)
<0.018Ω
<0.018Ω
■ Extremely dv/dt capability
■ 100% avalanche tested
■ Application oriented characterization
ID
80A
80A
Application
■ Switching applications
Description
These Power MOSFETs are the latest
development of STMicroelectronics unique "single
feature size" strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
allowing remarkable manufacturing
reproducibility.
3
1
D2PAK
3
2
1
TO-220
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
STP80PF55
STB80PF55
Marking
P80PF55
B80PF55
Package
TO-220
D2PAK
Packaging
Tube
Tape and reel
August 2010
Doc ID 8177 Rev 6
1/16
www.st.com
16
1 page  
STB80PF55, STP80PF55
Electrical characteristics
Note:
Table 7. Source drain diode
Symbol
Parameter
Test condictions
Min. Typ. Max. Unit
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 80 A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 80 A, di/dt = 100 A/µs
VDD = 25 V, Tj =150 °C
1. Pulse width limited by Tjmax .
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5 %.
-
-
-
10 A
40 A
1.6 V
110 ns
495 µC
9A
For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed
Doc ID 8177 Rev 6
5/16
5 Page 
STB80PF55, STP80PF55
Figure 17. D2PAK drawing
Package mechanical data
0079457_O
Doc ID 8177 Rev 6
11/16
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet B80PF55.PDF ] | |
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