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PDF NDBA180N10B Data sheet ( Hoja de datos )
| Número de pieza | NDBA180N10B | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
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NDBA180N10B
Power MOSFET
100V, 2.8mΩ, 180A, N-Channel
www.onsemi.com
Features
• Ultra Low On-Resistance
• Low Gate Charge
• High Speed Switching
• 100% Avalanche Tested
• Pb-Free, Halogen Free and RoHS Compliance
Specifications
Absolute Maximum Ratings at Ta = 25°C
Parameter
Symbol
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (DC) Limited by Package
Drain Current (Pulse)
PW≤10μs, duty cycle≤1%
Power Dissipation
Tc=25°C
VDSS
VGSS
ID
IDL
IDP
PD
Junction Temperature
Tj
Storage Temperature
Tstg
Source Current (Body Diode)
Avalanche Energy (Single Pulse) *1
Lead Temperature for Soldering
Purposes, 3mm from Case for 10 Seconds
IS
EAS
TL
Value
100
±20
180
100
600
200
175
−55 to +175
100
451
260
Unit
V
V
A
A
A
W
°C
°C
A
mJ
°C
VDSS
100V
RDS(on) Max
2.8mΩ@ 15V
3.3mΩ@ 10V
ID Max
180A
Electrical Connection
N-Channel
2,4
1 : Gate
1 2 : Drain
3 : Source
4 : Drain
3
Marking
Thermal Resistance Ratings
Parameter
Symbol
Value
Junction to Case Steady State
RθJC
Junction to Ambient *2
RθJA
Note : *1 VDD=48V, L=100μH, IAV=70A (Fig.1)
*2 Surface mounted on FR4 board using recommended footprint
0.75
62.5
Unit
°C/W
Packing Type:TL
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ORDERING INFORMATION
See detailed ordering and shipping information on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
March 2015 - Rev. 3
1
Publication Order Number :
NDBA180N10B/D
1 page  
Package Dimensions
NDBA180N10BT4H
D2PAK-3 (TO-263, 3-LEAD)
CASE 418AJ
ISSUE B
unit : mm
NDBA180N10B
www.onsemi.com
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet NDBA180N10B.PDF ] | |
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