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PDF NTLTD7900N Data sheet ( Hoja de datos )
| Número de pieza | NTLTD7900N | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
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NTLTD7900N
Power MOSFET
8.5 A, 20 V, Logic Level, N−Channel
Micro8] Leadless
EZFETs™ are an advanced series of Power MOSFETs which
contain monolithic back−to−back zener diodes. These zener diodes
provide protection against ESD and unexpected transients. These
miniature surface mount MOSFETs feature ultra low RDS(on) and true
logic level performance. EZFET devices are designed for use in low
voltage, high speed switching applications where power efficiency is
important. Typical applications are dc−dc converters, and power
management in portable and battery powered products such as
computers, printers, cellular and cordless phones.
Applications
• Zener Protected Gates Provide Electrostatic Discharge Protection
• Designed to Withstand 4000 V Human Body Model
• Ultra Low RDS(on) Provides Higher Efficiency and Extends
Battery Life
• Logic Level Gate Drive − Can be Driven by Logic ICs
• Micro8 Leadless Surface Mount Package − Saves Board Space
• IDSS Specified at Elevated Temperature
• Pb−Free Package is Available*
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Steady
Rating
Symbol 10 Secs State
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current (Note 1)
TA = 25°C
TA = 85°C
Pulsed Drain Current
(tp v 600 ms)
VDSS
VGS
ID
IDM
20
±12
8.5 6.0
6.1 4.2
30
V
V
A
A
Continuous Source−Diode
Conduction (Note 1)
Is 2.9 1.4 A
Total Power Dissipation (Note 1)
TA = 25°C
TA = 85°C
Operating Junction and Storage
Temperature Range
PD
TJ, Tstg
3.1 1.5
1.6 0.79
−55 to 150
W
°C
Thermal Resistance (Note 1)
Junction−to−Ambient
RqJA
40
82 °C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. When surface mounted to 1″ x 1″ FR−4 board.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
V(BR)DSS
20 V
RDS(on) TYP
20 mW @ 4.5 V
22 mW @ 2.5 V
ID MAX
8.5 A
DD
2.4 kW
G1
2.4 kW
G2
S1
N−Channel
N−Channel
S2
MARKING DIAGRAM
1
Micro8 Leadless
CASE 846C
1 790N
AYWW
G
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
PIN ASSIGNMENT
Drain 8
Drain 7
Drain 6
Drain 5
Drain
1 Source 1
2 Gate 1
3 Source 2
4 Gate 2
(Bottom View)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2005
October, 2005 − Rev. 1
1
Publication Order Number:
NTLTD7900N/D
1 page  
NTLTD7900N
ORDERING INFORMATION
Device
Package
Shipping†
NTLTD7900NR2G
Micro8 LL
(Pb−Free)
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet NTLTD7900N.PDF ] | |
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