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Número de pieza | SSF2122E | |
Descripción | 20V Dual N-Channel MOSFET | |
Fabricantes | GOOD-ARK | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de SSF2122E (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! Main Product Characteristics
VDSS
20V
RDS(on) 15.2mohm(typ.)
ID 7A ①
DFN 3x3-8L
Features and Benefits
Advanced MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
150℃ operating temperature
Lead free product
SSF2122E
20V Dual N-Channel MOSFET
Marking and Pin
Assignment
Schematic Diagram
Description
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in power switching application and a wide variety of other applications.
Absolute Max Rating
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V(Silicon Limited)
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current ②
Power Dissipation
Drain-Source Voltage
Gate-to-Source Voltage
Operating Junction and Storage Temperature Range
Max.
7①
5①
42
1.4
20
± 12
-55 to + 150
Units
A
W
V
V
°C
www.goodark.com
Page 1 of 8
Rev.1.0
1 page SSF2122E
20V Dual N-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure 5. Normalized On-Resistance Vs. Case
Temperature
Figure 6. Normalized On-Resistance Vs. Gate to
Source voltage
Figure 7. Typical Capacitance Vs. Drain-to-Source
Voltage
Figure 8. Gate-Charge Characteristics
www.goodark.com
Page 5 of 8
Rev.1.0
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet SSF2122E.PDF ] |
Número de pieza | Descripción | Fabricantes |
SSF2122E | 20V Dual N-Channel MOSFET | GOOD-ARK |
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