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PDF FDJ1032C Data sheet ( Hoja de datos )

Número de pieza FDJ1032C
Descripción Complementary PowerTrench MOSFET
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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No Preview Available ! FDJ1032C Hoja de datos, Descripción, Manual

F
FDJ1032C
Complementary PowerTrench® MOSFET
June 2008
Features
Q1 –2.8 A, –20 V.
Q2 3.2 A, 20 V.
Low gate charge
RDS(ON) = 160 m@ VGS = –4.5 V
RDS(ON) = 230 m@ VGS = –2.5 V
RDS(ON) = 390 m@ VGS = –1.8 V
RDS(ON) = 90 m@ VGS = 4.5 V
RDS(ON) = 130 m@ VGS = 2.5 V
High performance trench technology for extremely low
RDS(ON)
FLMP SC75 package: Enhanced thermal performance in
industry-standard package size
RoHS Compliant
General Description
These N & P-Channel MOSFETs are produced using Fairchild
Semiconductor’s advanced PowerTrench process that has been
especially tailored to minimize on-state resistance and yet main-
tain superior switching performance.
These devices are well suited for low voltage and battery pow-
ered applications where low in-line power loss and fast switch-
ing are required.
Applications
DC/DC converter
Load switch
Motor Driving
S2
S1
G1
G2
S2
S1
Bottom Drain Contact
43
Q2 (N)
52
61
Q1 (P)
Bottom Drain Contact
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
RθJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1a)
Q1 Q2
–20 20
±8 ±12
–2.8 3.2
–12 12
1.5
0.9
–55 to +150
80
5
Units
V
V
A
W
°C
°C/W
©2008 Fairchild Semiconductor Corporation
FDJ1032C Rev. B2(W)
1
www.fairchildsemi.com

1 page




FDJ1032C pdf
Typical Characteristics : Q1
5
ID = -2.8A
4
3
VDS = -5V
-15V
-10V
2
1
0
0 0.5 1 1.5 2 2.5 3 3.5
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
10
RDS(ON) LIMIT
1
VGS = -4.5V
0.1 SINGLE PULSE
RθJA = 140oC/W
TA = 25 oC
100 µs
1ms
10ms
1s 100ms
DC 10s
0.01
0.1
1 10
-VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area.
500
400
CISS
300
f = 1 MHz
VGS = 0 V
200
COSS
100
CRSS
0
0
5 10 15
-VDS, DRAIN TO SOURCE VOLTAGE (V)
20
Figure 8. Capacitance Characteristics.
10
SINGLE PULSE
8 RθJA = 140°C/W
TA = 25°C
6
4
2
0
0.001
0.01
0.1 1
t1, TIME (sec)
10
100 1000
Figure 10. Single Pulse Maximum
Power Dissipation.
FDJ1032C Rev. B2(W)
5
www.fairchildsemi.com

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