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PDF FDMJ1028N Data sheet ( Hoja de datos )
| Número de pieza | FDMJ1028N | |
| Descripción | N-Channel 2.5V Specified PowerTrench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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June 2006
FDMJ1028N
N-Channel 2.5V Specified PowerTrench® MOSFET
20V, 3.2A, 90mΩ
tm
Features
General Description
Max rDS(on) = 90mΩ at VGS = 4.5V
Max rDS(on) = 130mΩ at VGS = 2.5V
Low gate charge
High performance trench technology for extremely low
rDS(on)
RoHS Compliant
This dual N-Channel 2.5V specified MOSFET uses
Fairchild's advanced low voltage PowerTrench process.
The rDS(on) and thermal properties of the device are
optimized for battery power management applications.
Applications
Battery management
Baseband Switches
Bottom Drain Contact
43
52
61
Bottom Drain Contact
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Parameter
PD Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Temperature
Thermal Characteristics
RθJA
Thermal Resistance , Junction to Ambient
(Note 1a)
Package Marking and Ordering Information
Device Marking
028
Device
FDMJ1028N
Reel Size
7’’
Tape Width
8mm
Ratings
20
±12
3.2
12
1.4
0.8
-55 to +150
Units
V
V
A
W
°C
89 °C/W
Quantity
3000 units
©2006 Fairchild Semiconductor Corporation
FDMJ1028N Rev. C
1
www.fairchildsemi.com
1 page  
Typical Characteristics TJ = 25°C unless otherwise noted
2
1 DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
0.01
1E-3
10-5
SINGLE PULSE
10-4
10-3 10-2 10-1 100
t, RECTANGULAR PULSE DURATION(s)
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
101 102
Figure 12. Transient Thermal Response Curve
103
FDMJ1028N Rev. C
5 www.fairchildsemi.com
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet FDMJ1028N.PDF ] | |
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