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PDF FDC699P Data sheet ( Hoja de datos )
| Número de pieza | FDC699P | |
| Descripción | P-Channel 2.5V PowerTrench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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January 2004
FDC699P
P-Channel 2.5V PowerTrench MOSFET
General Description
This P-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (2.5V – 12V).
Applications
• Battery management
• Load Switch
• Battery protection
Features
• –7 A, –20 V
RDS(ON) = 22 mΩ @ VGS = –4.5 V
RDS(ON) = 30 mΩ @ VGS = –2.5 V
• High performance trench technology for extremely
low RDS(ON)
• Fast switching speed
• FLMP SuperSOT-6 package: Enhanced thermal
performance in industry-standard package size
G
S
S
SuperSOT-6TM FLMP
S
S
S
16
25
34
Bottom Drain
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD Power Dissipation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.699
FDC699P
7’’
Ratings
–20
±12
–7
–40
2
1.5
–55 to +150
60
111
0.5
Tape width
8mm
2004 Fairchild Semiconductor Corporation
Units
V
V
A
W
°C
°C/W
Quantity
3000 units
FDC699P Rev C2 (W)
1 page  
Typical Characteristics
5
ID = -7A
4
3
VDS = -5V
-15V
-10V
2
1
0
0 5 10 15 20 25 30
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
RDS(ON) LIMIT
10
1
10µs
100µs
1ms
10ms
100ms
1s
10s
DC
0.1
0.01
0.1
VGS = -4.5V
SINGLE PULSE
RθJA = 111oC/W
TA = 25oC
1 10
-VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area.
4000
3500
3000
2500
2000
1500
1000
500
0
0
Crss
CISS
f = 1MHz
VGS = 0 V
Coss
5 10 15
-VDS, DRAIN TO SOURCE VOLTAGE (V)
20
Figure 8. Capacitance Characteristics.
50
SINGLE PULSE
RθJA = 111°C/W
40 TA = 25°C
30
20
10
0
0.001
0.01
0.1 1 10
t1, TIME (sec)
100 1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
0.2
0.1 0.1
RθJA(t) = r(t) * RθJA
RθJA = 111 °C/W
0.01
0.05
0.02
0.01
P(pk)
t1
t2
SINGLE PULSE
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10 100 1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDC699P Rev C2 (W)
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet FDC699P.PDF ] | |
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