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PDF IRF4104LPbF Data sheet ( Hoja de datos )

Número de pieza IRF4104LPbF
Descripción AUTOMOTIVE MOSFET
Fabricantes International Rectifier 
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PD - 95468
AUTOMOTIVE MOSFET
IRF4104PbF
IRF4104SPbF
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free
Description
Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of
this design are a 175°C junction operating tempera-
ture, fast switching speed and improved repetitive
avalanche rating . These features combine to make
this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety
of other applications.
Absolute Maximum Ratings
IRF4104LPbF
HEXFET® Power MOSFET
D
VDSS = 40V
G RDS(on) = 5.5m
S ID = 75A
TO-220AB
IRF4104
D2Pak
IRF4104S
TO-262
IRF4104L
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
™ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package limited)
IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Max.
120
84
75
470
140
Units
A
W
Linear Derating Factor
VGS Gate-to-Source Voltage
dEAS (Thermally limited) Single Pulse Avalanche Energy
hEAS (Tested ) Single Pulse Avalanche Energy Tested Value
ÙIAR Avalanche Current
gEAR Repetitive Avalanche Energy
TJ Operating Junction and
TSTG
Storage Temperature Range
0.95
± 20
120
220
See Fig.12a, 12b, 15, 16
-55 to + 175
W/°C
V
mJ
A
mJ
°C
Soldering Temperature, for 10 seconds
iMounting Torque, 6-32 or M3 screw
Thermal Resistance
300 (1.6mm from case )
y y10 lbf in (1.1N m)
Parameter
Typ.
Max.
Units
RθJC
RθCS
RθJA
RθJA
Junction-to-Case
iCase-to-Sink, Flat Greased Surface
iJunction-to-Ambient
jJunction-to-Ambient (PCB Mount)
––– 1.05 °C/W
0.50 –––
––– 62
––– 40
1

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