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PDF FSS273 Data sheet ( Hoja de datos )
| Número de pieza | FSS273 | |
| Descripción | N-Channel Silicon MOSFET | |
| Fabricantes | Sanyo | |
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Ordering number : ENA0329
FSS273
SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET
FSS273 General-Purpose Switching Device
Applications
Features
• Motor drive applications.
• Inverter drive applications.
• 4V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (PW≤10s)
Drain Current (PW≤10µs)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
ID
IDP
PD
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
Duty cycle≤1%
Duty cycle≤1%
Mounted on a ceramic board (1200mm2!0.8mm), PW≤10s
Ratings
45
±20
8
8.5
32
2.4
150
--55 to +150
Unit
V
V
A
A
A
W
°C
°C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Marking : S273
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
ID=1mA, VGS=0V
VDS=45V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=8A
ID=8A, VGS=10V
ID=4A, VGS=4V
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
min
45
1.2
6
Ratings
typ
max
Unit
V
1 µA
±10 µA
2.6 V
10 S
16 22 mΩ
24 34 mΩ
2225
pF
260 pF
190 pF
27 ns
55 ns
150 ns
80 ns
Continued on next page.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
80906 / 22006PA MS IM TB-00002037 No. A0329-1/4
1 page | ||
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