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PDF SCH2830 Data sheet ( Hoja de datos )

Número de pieza SCH2830
Descripción P-Channel Silicon MOSFET
Fabricantes Sanyo 
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Ordering number : ENA0861
SCH2830
SANYO Semiconductors
DATA SHEET
SCH2830
MOSFET : P-Channel Silicon MOSFET
SBD : Schottky Barrier Diode
General-Purpose Switching Device
Applications
Features
Composite type with a P-channel silicon MOSFET and a schottky barrier diode contained in one package
facilitating high-density mounting.
[MOSFET]
Low ON-resistance.
Ultrahigh-speed switching.
1.8V drive.
[SBD]
Short reverse recovery time.
Low forward voltage.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
[MOSFET]
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
[SBD]
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
VRRM
VRSM
Average Output Current
IO
Marking : XF
Conditions
PW10µs, duty cycle1%
Mounted on a ceramic board (900mm20.8mm) 1unit
Mounted on a ceramic board (900mm20.8mm)
Mounted in Cu-foiled area of 0.72mm20.03mm
on glass epoxy board
Ratings
Unit
--20
±10
--1
--4
0.6
150
--55 to +125
V
V
A
A
W
°C
°C
30 V
30 V
0.7 A
0.5 A
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer's products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
62707PE TI IM TC-0000761 No. A0861-1/6

1 page




SCH2830 pdf
SCH2830
IF -- VF
[SBD]
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0
0.1 0.2 0.3 0.4
Forward Voltage, VF -- V
PF(AV) -- IO
0.35
Rectangular wave
0.5 0.6
IT07927
[SBD]
0.30
θ
0.25
360°
Sine wave
(1) (2) (4) (3)
0.20
0.15
180°
360°
3
2
10000
7
5
3
2
1000
7
5
3
2
100
7
5
3
2
10
7
5
3
2
1.0
0
7
5
3
2
0.10
0.05
0
0
3.5
3.0
2.5
2.0
(1) Rectangular wave θ=60°
(2) Rectangular wave θ=120°
(3) Rectangular wave θ=180°
(4) Sine wave θ=180°
0.1 0.2 0.3 0.4 0.5 0.6
Average Output Current, IO -- A
IFSM -- t
IT08187
[SBD]
Current waveform 50Hz sine wave
IS
20ms
t
10
7
5
1.0
1.5
1.0
0.5
0
7 0.01
23
5 7 0.1 2 3
Time, t -- s
5 7 1.0
23
ID00338
IR -- VR
Ta=125°C
100°C
75°C
50°C
25°C
[SBD]
5 10 15
Reverse Voltage, VR -- V
C -- VR
20
IT10260
[SBD]
f=1MHz
23
5 7 10
Reverse Voltage, VR -- V
23
IT06807
No. A0861-5/6

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